G2R120MT33J-TR

$78.15

Description：3300V 120M TO-263-7 G2R SIC MOSF
Series：LoRing™
Mfr：GeneSiC Semiconductor
Package：Tape & Reel (TR)

SKU:13e82b4e2f6f Category: Single FETs, MOSFETs Brand: GeneSiC Semiconductor

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Product introduction

G2R120MT33J-TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is 3300V 120M TO-263-7 G2R SIC MOSF. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for G2R120MT33J-TR

Description：3300V 120M TO-263-7 G2R SIC MOSF
Series：LoRing™
Mfr：GeneSiC Semiconductor
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：3300 V
Current - Continuous Drain (Id) @ 25°C：33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：156mOhm @ 15A, 20V
Vgs(th) (Max) @ Id：3.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs：130 nC @ 20 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：3009 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：366W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Single FETs, MOSFETs datasheet and documents for G2R120MT33J-TR

G2R120MT33J-TR

Single FETs, MOSFETs Overview

The G2R120MT33J-TR is a 3300 V N-channel enhancement mode Silicon Carbide (SiC) MOSFET from the G2R series. It features a typical drain-source on-state resistance of 120 mΩ and a continuous forward current rating of 24 A at 100°C. The device utilizes a TO-263-7 package with a separate Kelvin source pin for optimized gate drive performance.

Single FETs, MOSFETs Feature Summary

LoRing™ electromagnetically optimized design for reduced ringing
Separate Kelvin source pin in the package for improved switching control
Robust body diode characteristics with low reverse recovery charge
Stable normally-off operation up to 175°C junction temperature

Single FETs, MOSFETs Applications

Solar string inverters
EV fast chargers
Switched mode power supplies
Solid state transformers
Energy storage systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-TR' against the manufacturer's official documentation to confirm reel packaging specifications. Ensure compatibility with commercial gate drivers as stated in the datasheet advantages. Confirm RoHS compliance status through official channels prior to procurement.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust short-circuit immunity and low switching losses. The separate Kelvin source pin facilitates precise gate voltage control, minimizing parasitic effects. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values.

Single FETs, MOSFETs Part Context

This part belongs to the GeneSiC Semiconductor G2R series of silicon carbide MOSFETs. The series is characterized by trench-assisted planar technology designed for high-efficiency power conversion. The G2R120MT33J specifically targets 3300 V applications within the broader portfolio of SiC discrete devices.