G3F60MT06L-TR

Single FETs, MOSFETs Overview

The G3F60MT06L-TR is a silicon carbide (SiC) MOSFET from the GeneSiG G3F series, manufactured by Navitas Semiconductor. It features an N-channel enhancement mode configuration housed in a TO-LL surface-mount package. Key electrical specifications include a drain-source breakdown voltage (Vds) of 650 V and a maximum continuous drain current (Id) rating. The device exhibits a low on-resistance (Rds(on)) of 55 mΩ, facilitating efficient power switching with reduced conduction losses.

Single FETs, MOSFETs Feature Summary

• Utilizes silicon carbide semiconductor technology for high thermal stability and efficiency.
• Features a low on-resistance design to minimize conduction losses during operation.
• Incorporates an enhancement mode N-channel structure for reliable switching control.

Single FETs, MOSFETs Applications

• High-frequency power conversion circuits
• DC-DC converter topologies requiring compact form factors
• Efficient motor drive systems

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as Navitas Semiconductor or GeneSiC Semiconductor when sourcing. Confirm the specific TO-LL package variant matches the intended PCB footprint. Ensure the component meets RoHS compliance requirements for the target assembly process. Cross-reference the part number suffix to guarantee correct reel packaging specifications.

Single FETs, MOSFETs Selection Notes

Select this component for applications demanding high voltage handling within a small surface-mount envelope. The 55 mΩ on-resistance offers a balance between conduction loss and cost compared to lower resistance alternatives. Consider the thermal performance inherent to the SiC material when designing heat dissipation strategies for the TO-LL package.

Single FETs, MOSFETs Part Context

This device belongs to the G3F series of discrete SiC MOSFETs designed for power electronics. The series includes various packages such as TO-247 and HV-T2PAK, offering different current and resistance ratings. The G3F60MT06L-TR specifically targets space-constrained designs requiring robust 650 V blocking capability.

Single FETs, MOSFETs FAQ

What is the gate-source voltage range for the G3F60MT06L-TR?

Specific gate-source voltage limits are not provided in the available documentation; consult the official datasheet for absolute maximum ratings.

Is the G3F60MT06L-TR available in a through-hole package?

No, the G3F60MT06L-TR is specified for surface-mount installation in a TO-LL package. Through-hole variants exist within the same series but carry different model numbers.