Single FETs, MOSFETs G5N02L product image

G5N02L

$0.05
  • Description:N20V, 5A, RD<18M@10V,VTH0.4V~1.0
  • Series:-
  • Mfr:Goford Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:197843b12db7 Category: Brand:

  
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G5N02L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is N20V, 5A, RD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for G5N02L

  • Description:N20V, 5A, RD<18M@10V,VTH0.4V~1.0
  • Series:-
  • Mfr:Goford Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
  • Rds On (Max) @ Id, Vgs:18mOhm @ 4.2A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:780 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):1.25W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for G5N02L

G5N02L

Single FETs, MOSFETs Overview

The G5N02L is an N-channel MOSFET manufactured by Goford Semiconductor, housed in a SOT-23-3 surface-mount package. It features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 5 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 18 mΩ at 10 V gate drive and 4.2 A drain current. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 1 V max at 250 µA, a maximum gate charge (Qg) of 11 nC at 4.5 V, and an input capacitance (Ciss) of 780 pF at 10 V. Maximum power dissipation is 1.25 W at case temperature, with an operating junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • Utilizes advanced trench technology to achieve low on-resistance and reduced gate charge for efficient switching performance.

Single FETs, MOSFETs Applications

  • DC-DC converter circuits
  • Power management systems
  • Battery protection modules

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and tape-and-reel specifications. Confirm RoHS compliance status and environmental certifications prior to integration. Ensure component authenticity through authorized distribution channels to mitigate counterfeit risks. Review datasheet revisions for any updates to thermal or electrical characteristics before final design approval.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a compact N-channel MOSFET with a 20 V rating and 5 A current capacity. The low gate charge supports high-frequency switching operations, while the SOT-23-3 package suits space-constrained designs. Evaluate thermal management requirements carefully, as the 1.25 W power dissipation limit necessitates adequate heat sinking or PCB copper area for reliable operation under load.

Single FETs, MOSFETs Part Context

Goford Semiconductor specializes in the research, development, and production of power MOSFETs. The company focuses on delivering high-reliability components for various electronic markets. This part belongs to their standard N-channel MOSFET lineup, designed to meet specific performance and cost requirements for consumer and industrial electronics applications.

Single FETs, MOSFETs Replacement Considerations

The G6N02L is documented as a similar substitute part number from the same manufacturer. Verify pin compatibility and electrical parameter alignment before implementation.

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