G900P15D5

$1.86

Description：P-150V,-60A,RD(MAX)<80M@-10V,VTH
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:cc0fea49e123 Category: Single FETs, MOSFETs Brand: Goford Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

G900P15D5 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is P-150V,-60A,RD(MAX). Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for G900P15D5

Description：P-150V,-60A,RD(MAX)<80M@-10V,VTH
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：80mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4050 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：100W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (4.9x5.75)
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for G900P15D5

G900P15D5

Single FETs, MOSFETs Overview

The G900P15D5 is a P-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and reduced gate charge. The device features a drain-source voltage of -150 V, a continuous drain current of -35 A at 25°C case temperature, and a maximum power dissipation of 198 W. It is housed in an 8-pin DFN5X6 package.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for optimized switching performance
High avalanche energy capability with 100% testing
Low thermal resistance junction-to-case for efficient heat transfer

Single FETs, MOSFETs Applications

Power switch circuits
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging quantities and reel specifications. Confirm RoHS compliance status directly from the datasheet before finalizing procurement plans. Ensure the selected component matches the required electrical ratings for the target application environment.

Single FETs, MOSFETs Selection Notes

Select this component based on its -150 V rating and -35 A continuous current capacity. Evaluate the thermal requirements using the specified junction-to-case thermal resistance. Consider the gate charge characteristics for driving efficiency in high-frequency applications. Verify that the operating temperature range meets the system's environmental constraints.

Single FETs, MOSFETs Part Context

This part belongs to the P-Channel Enhancement Mode Power MOSFET series from Goford Semiconductor. It is designed for general-purpose power switching applications requiring robust performance. The device integrates body diode characteristics suitable for synchronous rectification or inductive load switching scenarios.