GA300

Scrs Overview

The GA300 is a commercial nanosecond switching planar Silicon Controlled Rectifier (SCR) manufactured by Microsemi Corporation. It features a breakover voltage of 60 V and a breakover current of 0.4 A. The device has a maximum gate trigger voltage of 750 mV and a maximum gate trigger current of 200 µA. It is designed for high-speed applications requiring rapid switching capabilities within its specified electrical limits.

Scrs Feature Summary

• Nanosecond switching capability for high-speed commercial applications
• Planar SCR structure for reliable performance
• Low gate trigger requirements for efficient control

Scrs Applications

• High-speed switching circuits
• Commercial electronic systems requiring fast response times
• Pulse power applications

Scrs Procurement Notes

Verify the active status and specific datasheet version before procurement, as component availability and specifications may change. Confirm that the 60 V breakover voltage and nanosecond switching characteristics align with your circuit design requirements. Ensure compatibility with your system's thermal and electrical constraints.

Scrs Selection Notes

Select the GA300 when nanosecond switching speed is critical and low voltage operation around 60 V is required. Consider the low gate trigger current and voltage for drive circuit simplicity. Evaluate if the planar structure meets your reliability standards for commercial use compared to other SCR technologies.

Scrs Part Context

Microsemi Corporation, now part of Microchip Technology Inc., specializes in semiconductor solutions for aerospace, defense, communications, and industrial markets. The GA300 represents their offering in high-speed commercial SCRs, leveraging their expertise in planar silicon technologies for robust and fast-switching components.

Scrs Replacement Considerations

Check for direct cross-references or updated part numbers from Microchip/Microsemi. Verify electrical parameters such as breakover voltage (60 V), gate trigger specs, and switching speed against potential substitutes to ensure functional equivalence in nanosecond switching applications.