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GC05MPS33J-TR is listed in the Single Diodes range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE SIL CARB 3300V 11A TO2637. Review the specifications below when checking this part for your BOM.
The GC05MPS33J is a Silicon Carbide Schottky MPS diode rated for a repetitive peak reverse voltage of 3300 V and a continuous forward current of 5 A at 157°C. It features a TO-263-7 surface-mount package with a thermal resistance from junction to case of 0.84 °C/W. The device exhibits a maximum forward voltage of 3.0 V at 25°C and 4.5 V at 175°C, with a total capacitive charge of 42 nC at 1700 V. Operating temperatures range from -55°C to +175°C.
Verify the specific ordering suffix 'TR' against official GeneSiC documentation to confirm reel packaging specifications. Ensure compatibility with TO-263-7 footprint dimensions during PCB layout. Confirm RoHS compliance status through official declarations prior to integration into regulated assemblies.
Select this component for high-voltage applications requiring low reverse leakage and high thermal stability. Evaluate the 3300 V rating against system transient voltages. Consider the TO-263-7 package for surface-mount assembly requirements. Verify that the 5 A continuous current rating meets the thermal derating curves for the intended operating environment.
This part belongs to the GeneSiC SiC Schottky MPS™ diode family, designed for high-performance power conversion. It utilizes silicon carbide technology to achieve superior figure of merit compared to traditional silicon devices. The product line targets demanding industrial and energy applications requiring high reliability and efficiency.
No public confirmed substitute part numbers are documented in the provided datasheet.
The typical thermal resistance from junction to case (RthJC) is 0.84 °C/W.
No, the SiC Schottky MPS diode features zero reverse recovery current.
The maximum non-repetitive peak forward surge current is 250 A with a pulse width of 10 µs at 25°C.
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