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GC2X50MPS06-227 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SIC 650V 104A SOT-227. Review the specifications below when checking this part for your BOM.
The GC2X50MPS06-227 is a dual silicon carbide Schottky MPS diode manufactured by GeneSiC Semiconductor. It features a 650V repetitive peak reverse voltage and a continuous forward current of 100A per device at 114°C case temperature. The component utilizes an isolated SOT-227 package with a thermal resistance of 0.67°C/W per leg. Key electrical parameters include a maximum forward voltage of 1.8V at 50A and 25°C, and a total capacitive charge of 280nC. It supports operating temperatures from -55°C to 175°C.
Verify the specific manufacturing revision against the latest datasheet documentation prior to integration. Confirm that the SOT-227 mounting torque specifications are strictly adhered to during assembly to maintain isolation voltage ratings. Ensure the application environment remains within the specified -55°C to 175°C operating temperature range for reliable performance.
Select this component for high-frequency applications requiring low reverse leakage and zero reverse recovery charge. The positive temperature coefficient facilitates safe parallel operation without thermal runaway. Evaluate the 0.67°C/W junction-to-case thermal resistance against system cooling capabilities to ensure power dissipation limits are not exceeded under maximum load conditions.
This part belongs to the SiC Schottky MPS series from GeneSiC Semiconductor. It is designed as a high-efficiency replacement for traditional silicon rectifiers in power conversion systems. The dual configuration in an isolated package allows for compact designs in bridge or half-bridge topologies while maintaining high reliability standards.
No public confirmed substitute part numbers are available.
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