RF Diode GC4921-112 product image

GC4921-112

  • Description:RF DIODE PIN 100V 1W
  • Series:-

SKU:5ea13621d82d Category: Brand:

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GC4921-112 is listed in the RF Diode range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RF DIODE PIN 100V 1W. Review the specifications below when checking this part for your BOM.

RF Diode specifications for GC4921-112

  • Description:RF DIODE PIN 100V 1W
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bag
  • Diode Type:PIN - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):100V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.02pF @ 10V, 1MHz
  • Resistance @ If, F:6.5Ohm @ 10mA, 1GHz
  • Power Dissipation (Max):1 W
  • Operating Temperature:-65°C ~ 150°C
  • Package / Case:2-SMD, Flat Leads
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for GC4921-112

GC4921-112

RF Diode Overview

The GC4921-112 is a silicon PIN diode limiter manufactured by Microchip Technology. It features a non-hermetic beam lead package configuration designed for robust performance in harsh environments. The device operates with a maximum peak inverse voltage of 100V and supports a maximum operating frequency of 18 GHz. Key electrical characteristics include a maximum diode capacitance of 150 fF, a forward current rating of 10 mA, and a reverse current of 500 nA. The component has a carrier lifetime of 50 ns and functions as a single dual series EMB diode.

RF Diode Feature Summary

  • Non-hermetic beam lead construction for durability
  • High-frequency operation up to 18 GHz
  • Low capacitance design for signal integrity

RF Diode Applications

  • Rectification circuits
  • Voltage detection systems
  • Signal protection in electronic devices

RF Diode Procurement Notes

Verify the specific RoHS compliance status and manufacturing origin before procurement, as documentation indicates potential variations or specific ordering requirements. Confirm that the non-hermetic beam lead package meets the environmental constraints of the target application. Ensure the supplier provides valid traceability data for the silicon PIN diode construction to guarantee authenticity and performance consistency.

RF Diode Selection Notes

Select this component when high-frequency limiting or rectification is required at frequencies up to 18 GHz. The low capacitance value of 150 fF makes it suitable for applications where signal distortion must be minimized. Consider the 100V peak inverse voltage rating to ensure adequate margin for the circuit's maximum operating conditions.

RF Diode Part Context

This part belongs to the RF Diodes category within Microchip Technology’s portfolio. It is classified under PIN Diodes and Rectifiers, specifically designed as a limiter. The device utilizes silicon technology and is packaged in a flat lead format, distinguishing it from standard surface mount or through-hole discrete diodes.

RF Diode Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs if direct substitution is considered.

GC4921-112GC4921-112

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