RF Diode GC9704-UC product image

GC9704-UC

  • Description:RF DIODE SCHOTTKY 1V CHIP
  • Series:-

SKU:8d572d34d5e1 Category: Brand:

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GC9704-UC is listed in the RF Diode range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RF DIODE SCHOTTKY 1V CHIP. Review the specifications below when checking this part for your BOM.

RF Diode specifications for GC9704-UC

  • Description:RF DIODE SCHOTTKY 1V CHIP
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tray
  • Diode Type:Schottky
  • Voltage - Peak Reverse (Max):1V
  • Current - Max:-
  • Capacitance @ Vr, F:0.8pF @ 0V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):-
  • Operating Temperature:-55°C ~ 150°C
  • Package / Case:Die
  • Supplier Device Package:Chip
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for GC9704-UC

GC9704-UC

RF Diode Overview

The GC9704-UC is a Schottky barrier diode from the GC9700 series, manufactured by Microchip Technology. It features a planar construction and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a minimum breakdown voltage of 5V at 10μA reverse current, a maximum junction capacitance of 0.8pF at 0V reverse bias, and a maximum forward voltage of 600mV at 1mA forward current. The device supports a minimum forward current of 100mA at 1.0V and has a maximum reverse leakage current of 1nA at 1V reverse bias.

RF Diode Feature Summary

  • Fast switching capability
  • Low turn-on voltage
  • RoHS compliant gold finish

RF Diode Applications

  • Mixers
  • Detectors
  • Limiters
  • Pulse shaping

RF Diode Procurement Notes

Verify the specific package style associated with the UC suffix directly with the manufacturer or authorized distributor, as standard datasheets may not explicitly define this code. Confirm RoHS compliance status and gold finish specifications for your application requirements before finalizing procurement orders.

RF Diode Selection Notes

Select the GC9704-UC when low junction capacitance and fast switching are critical for high-frequency mixer or detector circuits. Ensure the operating environment stays within the specified -55°C to +150°C range and that the forward current requirements do not exceed the rated limits for optimal performance.

RF Diode Part Context

This component belongs to the GC9700 series of general-purpose Schottky barrier diodes produced by Microchip Technology (formerly Microsemi). The series includes various models with different breakdown voltages and capacitance values, catering to diverse microwave and RF applications requiring reliable switching characteristics.

RF Diode Replacement Considerations

Consult the official datasheet for equivalent part numbers or cross-reference guides. Verify that any substitute component matches the required 5V breakdown voltage, 0.8pF capacitance, and planar construction to ensure compatibility in existing designs.

GC9704-UCGC9704-UC

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