GD2X100MPS06N

Diode Arrays Overview

The GD2X100MPS06N is a dual silicon carbide Schottky MPS diode module manufactured by GeneSiC Semiconductor. It features a 650 V repetitive peak reverse voltage and a 200 A continuous forward current rating per device at 86°C case temperature. The component utilizes Gen4 thin chip technology to achieve a low forward voltage of 1.5 V typical at 100 A and 25°C, alongside a total capacitive charge of 308 nC. Packaged in an isolated SOT-227 (miniBLOC) housing with screw mounting, it supports junction temperatures from -55°C to 175°C.

Diode Arrays Feature Summary

• Gen4 Thin Chip Technology for optimized figure of merit
• Zero reverse recovery current enabling fast switching
• Positive temperature coefficient of forward voltage
• High dV/dt ruggedness and avalanche tested

Diode Arrays Applications

• EV Fast Chargers
• Solar Inverters
• Switched Mode Power Supply (SMPS)
• Motor Drives
• Uninterruptible Power Supply (UPS)

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official GeneSiC documentation to confirm package variations or testing requirements. Confirm RoHS compliance status directly with the manufacturer prior to integration. Ensure thermal interface materials are compatible with the isolated base design. Validate that the selected heatsink torque specifications meet the 1.5 Nm requirement for reliable operation.

Diode Arrays Selection Notes

Select this component for high-frequency power conversion applications requiring low switching losses. The positive temperature coefficient facilitates easy parallel operation without thermal runaway risks. Evaluate system cooling capabilities against the specified power dissipation curves at target case temperatures. Consider the 3000 V RMS isolation voltage for safety-critical circuit designs.

Diode Arrays Part Context

This part belongs to the SiC Schottky MPS™ series from GeneSiC Semiconductor. It represents a generation of wide-bandgap devices designed to replace traditional silicon rectifiers in high-efficiency systems. The module integrates two independent diodes within a single robust mechanical housing suitable for industrial power electronics.

Diode Arrays Replacement Considerations

GD2X100MPS12N

Diode Arrays FAQ

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 2750 A at a pulse width of 10 µs and a junction temperature of 25°C.

Does the GD2X100MPS06N exhibit reverse recovery charge?

No, the device exhibits zero reverse recovery current due to its Schottky barrier construction.

What is the recommended mounting torque for the terminal screws?

The recommended mounting torque for M4 screws connecting to the heatsink is 1.3 Nm.