GD2X30MPS06D

Diode Arrays Overview

The GD2X30MPS06D is a Silicon Carbide Schottky MPS diode rated for 650 V repetitive peak reverse voltage and 60 A continuous forward current. It utilizes Gen4 Thin Chip Technology to achieve a low forward voltage of 1.8 V at 30 A and 25°C, with a total capacitive charge of 92 nC. The device operates within a temperature range of -55°C to +175°C and features a thermal resistance of 0.74 °C/W junction-to-case. Packaged in a TO-247-3 case, it supports mounting torques of 1.1 Nm.

Diode Arrays Feature Summary

• Gen4 Thin Chip Technology enables superior figure of merit and low forward voltage.
• Temperature independent fast switching characteristics ensure consistent performance across operating ranges.
• Positive temperature coefficient of forward voltage facilitates easy parallel operation without thermal runaway.
• High dV/dt ruggedness and enhanced surge current robustness improve system reliability.

Diode Arrays Applications

• Power Factor Correction (PFC)
• Electric Vehicles and Battery Chargers
• Solar Inverters
• Switched Mode Power Supply (SMPS)
• Motor Drives

Diode Arrays Procurement Notes

Verify the specific revision status against the manufacturer's latest documentation before finalizing designs. Confirm compliance requirements such as RoHS and REACH declarations directly with GeneSiC Semiconductor representatives. Ensure that mechanical mounting specifications, including torque limits and thermal interface materials, align with the application's cooling infrastructure to maintain safe operating temperatures.

Diode Arrays Selection Notes

Select this component for high-frequency applications requiring zero reverse recovery current and high efficiency. Evaluate the thermal management strategy based on the specified junction-to-case thermal resistance and power derating curves. Consider the package dimensions and mounting requirements when designing the PCB layout and heatsink interface to ensure optimal heat dissipation and mechanical stability.

Diode Arrays Part Context

This part belongs to the SiC Schottky MPS series from GeneSiC Semiconductor, designed for high-power density systems. It represents an advancement in silicon carbide technology, offering improved performance over traditional silicon diodes. The product line targets demanding industrial and automotive environments where reliability and switching speed are critical.

Diode Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided datasheet.

Diode Arrays FAQ

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 210 A at 25°C and 168 A at 150°C for a half-sine wave duration of 10 ms.

Does the device exhibit reverse recovery current?

No, the GD2X30MPS06D is a Schottky diode characterized by zero reverse recovery current, which reduces switching losses.

What is the avalanche energy rating?

The non-repetitive avalanche energy rating is 275 mJ when tested with an inductance of 0.6 mH and a current of 30 A.