GE12MPS06E

RF Diode Overview

The GE12MPS06E is a Silicon Carbide (SiC) Schottky MPS diode manufactured by GeneSiC Semiconductor, now part of Navitas. It features a single configuration in a TO-252-2 surface-mount package. Key electrical parameters include a maximum repetitive reverse voltage (Vrrm) of 650 V and a continuous forward current (If) of 12 A. The device exhibits a typical forward voltage (Vf) of 1.25 V at rated current and supports a forward surge current (Ifsm) of 70 A. Reverse leakage current (Ir) is specified at 10 µA. The component operates within a junction temperature range of -55°C to +175°C.

RF Diode Feature Summary

• Utilizes Silicon Carbide (SiC) material for high thermal stability and efficiency.
• Integrates Multi-Pillar Schottky (MPS) architecture to reduce reverse recovery charge.
• Designed for surface-mount installation in compact power circuits.

RF Diode Applications

• High-frequency DC-DC converters
• Power factor correction (PFC) circuits
• Solar micro-inverters

RF Diode Procurement Notes

Verify the manufacturer designation carefully, as GeneSiC Semiconductor products are often listed under Navitas Semiconductor in distributor catalogs. Confirm the specific suffix indicates the standard TO-252-2 reel packaging. Ensure the ordering quantity aligns with the factory pack size requirements specified by the authorized supplier.

RF Diode Selection Notes

Select this component when a 650V SiC diode with higher current capacity than the 10A variant is required. The TO-252-2 package suits applications needing moderate current handling in space-constrained designs. Compare thermal resistance values against the system heatsink capabilities to ensure operation remains within the +175°C maximum junction temperature limit.

RF Diode Part Context

This part belongs to the SiC Schottky MPS series from GeneSiC/Navitas. It serves as a higher-current alternative to the GE10MPS06E (10A) within the same voltage rating family. The MPS technology distinguishes it from standard PiN diodes by offering improved switching performance and lower reverse recovery losses.

RF Diode Replacement Considerations

Direct pin-compatible replacements within the same series include the GE10MPS06E, though it offers lower current ratings. Cross-brand equivalents require verification of Vrrm, If, Vf, and package dimensions (TO-252-2). Ensure any substitute maintains the SiC MPS topology for equivalent switching characteristics.