GMP4212-GM1/TR

RF Diode Overview

The GMP4212-GM1/TR is a single silicon PIN diode designed for RF applications, manufactured by Microchip Technology. It features a non-hermetic plastic surface-mount technology (SMT) package in the 0805 form factor. The device operates within a temperature range of -55°C to 125°C. Key electrical specifications include a junction capacitance of 0.25 pF at 10V bias and 1MHz, and a forward resistance of 1.5Ω at 20mA and 100MHz.

RF Diode Feature Summary

• Utilizes silicon PIN technology for high-frequency RF signal control
• Features low junction capacitance for minimal signal attenuation
• Designed with a compact 0805 SMT package for space-constrained layouts

RF Diode Applications

• RF switching circuits
• Attenuator modules
• Phase shifters

RF Diode Procurement Notes

Verify the specific ordering suffix TR against official Microchip documentation to confirm tape-and-reel packaging configuration. Ensure the component meets RoHS compliance requirements for your assembly process. Cross-reference the part number with the manufacturer's latest datasheet to confirm pinout and thermal characteristics before integration.

RF Diode Selection Notes

Select this component when low capacitance is critical for high-frequency performance. The 0805 package offers a balance between power handling and board space efficiency. Consider the operating temperature range of -55°C to 125°C for environmental suitability in industrial or automotive contexts.

RF Diode Part Context

This part belongs to the GMP series of RF PIN diodes from Microchip Technology. The series includes variants such as the GMP4232-GM1/TR, which supports higher voltage applications up to 300V. These components are widely used in microwave and RF systems requiring precise signal modulation.

RF Diode Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.