GS66516T-MR

Single FETs, MOSFETs Overview

The GS66516T-MR is a Gallium Nitride (GaN) field-effect transistor from Infineon Technologies, belonging to the GS66516x series. It is an enhancement-mode GaN High Electron Mobility Transistor (E-HEMT) rated for a drain-source voltage of 650 V and a continuous drain current of 60 A. The device utilizes the GaNPX package with top-side cooling capability. Key electrical parameters include a maximum on-resistance of 32 mOhms, a gate charge of 14.2 nC, and a threshold voltage of 2.6 V. It operates within a temperature range of -55 °C to +150 °C and supports switching frequencies up to 10 MHz.

Single FETs, MOSFETs Feature Summary

• Enhancement-mode GaN HEMT technology providing high-speed switching capabilities
• Top-side cooled GaNPX package design for efficient thermal management
• Low on-resistance and low gate charge characteristics for reduced conduction and switching losses

Single FETs, MOSFETs Applications

• High-frequency power conversion systems
• Server and data center power supplies
• Industrial motor drives and inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'MR' against official Infineon documentation to confirm reel packaging specifications. Confirm availability status as distribution listings may indicate restricted supply or end-of-life conditions. Ensure compatibility with existing PCB footprints designed for the GaNPX package before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high power density and efficiency in the 650 V domain. Compare the 32 mOhm on-resistance and 14.2 nC gate charge against alternative devices to optimize thermal design and driver requirements. Consider the top-side cooling requirement when designing the mechanical assembly and thermal interface.

Single FETs, MOSFETs Part Context

This part belongs to the GS665xx family of GaN FETs from Infineon Technologies. It is distinct from other variants such as the GS66516B-E01-MR, which features different electrical parameters like a lower on-resistance of 25 mOhms and a different threshold voltage. The GS66516T-MR represents a specific configuration within the legacy GaN systems portfolio.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Evaluate alternatives based on matching 650 V rating, 60 A current capacity, and GaNPX package compatibility.