GT019N04D5

$1.03

Description：N40V,120A,RD<2.8M@10V,VTH1.0V~2.
Series：SGT
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b50f755819ac Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

GT019N04D5 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is N40V,120A,RD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GT019N04D5

Description：N40V,120A,RD<2.8M@10V,VTH1.0V~2.
Series：SGT
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：95 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2840 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：63W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (4.9x5.75)
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for GT019N04D5

GT019N04D5

Single FETs, MOSFETs Overview

The GT019N04D5 is an N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a drain-source voltage of 40V and a continuous drain current of 120A at VGS = 10V. On-resistance is specified as less than 2.8mΩ at VGS = 10V and less than 4.0mΩ at VGS = 4.5V. It is housed in a DFN5X6-8L package with a maximum junction-to-case thermal resistance of 2.0°C/W.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for excellent RDS(ON) and low gate charge
100% avalanche tested for enhanced reliability
RoHS compliant construction

Single FETs, MOSFETs Applications

Power switches
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation, as it may affect packaging or marking details. Confirm that the component meets RoHS compliance requirements for your target market. Ensure the DFN5X6-8L package dimensions align with your PCB layout constraints before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 40V N-channel MOSFET with high current handling capability is required. The low thermal resistance supports efficient heat dissipation in compact designs. Consider the gate charge specifications for switching frequency requirements in DC/DC converter applications.

Single FETs, MOSFETs Part Context

This part belongs to Goford Semiconductor's N-channel enhancement mode power MOSFET lineup. It is designed for general-purpose switching applications requiring robust performance in a small footprint. The device is suitable for integration into modern power management systems.