Transistor, Photovoltaic Output Optoisolators H11B1 product image

H11B1

  • Description:OPTOISO 5.3KV DARL W/BASE 6-DIP
  • Series:-
  • Mfr:onsemi
  • Package:Tube

SKU:bf541cd2f0cc Category: Brand:

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H11B1 is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists onsemi. Its product description is OPTOISO 5.3KV DARL W/BASE 6-DIP. Review the specifications below when checking this part for your BOM.

Transistor, Photovoltaic Output Optoisolators specifications for H11B1

  • Description:OPTOISO 5.3KV DARL W/BASE 6-DIP
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Number of Channels:1
  • Voltage - Isolation:5300Vrms
  • Current Transfer Ratio (Min):500% @ 1mA
  • Current Transfer Ratio (Max):-
  • Turn On / Turn Off Time (Typ):25µs, 18µs
  • Rise / Fall Time (Typ):-
  • Input Type:DC
  • Output Type:Darlington with Base
  • Voltage - Output (Max):25V
  • Current - Output / Channel:-
  • Voltage - Forward (Vf) (Typ):1.2V
  • Current - DC Forward (If) (Max):100 mA
  • Vce Saturation (Max):1V
  • Operating Temperature:-55°C ~ 100°C
  • Mounting Type:Through Hole
  • Package / Case:6-DIP (0.300", 7.62mm)
  • Supplier Device Package:6-DIP

Transistor, Photovoltaic Output Optoisolators datasheet and documents for H11B1

H11B1

Transistor, Photovoltaic Output Optoisolators Overview

The onsemi H11B1 is a single-channel phototransistor output optocoupler housed in a PDIP-6 package. It features a DC input with a maximum forward current of 80 mA and a typical forward voltage of 1.5 V. The device provides an isolation voltage of 4170 Vrms. Key electrical parameters include a maximum collector-emitter voltage of 60 V, a maximum collector current of 150 mA, and a minimum current transfer ratio of 500%. Operating temperatures range from -40°C to +100°C.

Transistor, Photovoltaic Output Optoisolators Feature Summary

  • Provides high-voltage electrical isolation between input and output circuits
  • Features a photodarlington output for high current transfer efficiency
  • Designed for reliable signal transmission in digital logic interfaces

Transistor, Photovoltaic Output Optoisolators Applications

  • Industrial control systems requiring galvanic isolation
  • Microcontroller interface circuits for noise immunity
  • Power supply feedback loops

Transistor, Photovoltaic Output Optoisolators Procurement Notes

Verify the specific suffix (e.g., M) against the datasheet to confirm pinout and packaging details. Confirm RoHS compliance status as manufacturing updates may occur. Check for obsolete status or active substitute recommendations directly from onsemi documentation before finalizing procurement plans.

Transistor, Photovoltaic Output Optoisolators Selection Notes

Select this component when high current transfer ratio is required for driving loads directly. Ensure the application voltage does not exceed the 60 V collector-emitter rating. Verify that the DIP-6 through-hole package fits the PCB layout constraints compared to surface-mount alternatives like the H11B1SR2M.

Transistor, Photovoltaic Output Optoisolators Part Context

This part belongs to the H11B series of transistor output optocouplers. It serves as a legacy alternative to newer surface-mount variants within the same functional family. The device is designed for general-purpose isolation applications where high CTR and robust insulation are primary requirements.

Transistor, Photovoltaic Output Optoisolators Replacement Considerations

H11B1SR2M is a listed surface-mount substitute. Verify pin compatibility and package dimensions before substitution.

H11B1H11B1

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