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H11B1 is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists onsemi. Its product description is OPTOISO 5.3KV DARL W/BASE 6-DIP. Review the specifications below when checking this part for your BOM.
The onsemi H11B1 is a single-channel phototransistor output optocoupler housed in a PDIP-6 package. It features a DC input with a maximum forward current of 80 mA and a typical forward voltage of 1.5 V. The device provides an isolation voltage of 4170 Vrms. Key electrical parameters include a maximum collector-emitter voltage of 60 V, a maximum collector current of 150 mA, and a minimum current transfer ratio of 500%. Operating temperatures range from -40°C to +100°C.
Verify the specific suffix (e.g., M) against the datasheet to confirm pinout and packaging details. Confirm RoHS compliance status as manufacturing updates may occur. Check for obsolete status or active substitute recommendations directly from onsemi documentation before finalizing procurement plans.
Select this component when high current transfer ratio is required for driving loads directly. Ensure the application voltage does not exceed the 60 V collector-emitter rating. Verify that the DIP-6 through-hole package fits the PCB layout constraints compared to surface-mount alternatives like the H11B1SR2M.
This part belongs to the H11B series of transistor output optocouplers. It serves as a legacy alternative to newer surface-mount variants within the same functional family. The device is designed for general-purpose isolation applications where high CTR and robust insulation are primary requirements.
H11B1SR2M is a listed surface-mount substitute. Verify pin compatibility and package dimensions before substitution.
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