H5N2901FN-E

$2.13

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:59183a2a6960 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

H5N2901FN-E is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for H5N2901FN-E

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for H5N2901FN-E

H5N2901FN-E

Single FETs, MOSFETs Overview

The H5N2901FN-E is a silicon N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source breakdown voltage of 290 V and a continuous drain current rating of 18 A. The device exhibits a maximum on-resistance of 0.091 ohm, supporting efficient high-speed power switching applications. It is housed in an isolated flange-mount TO-220AB package with four terminals.

Single FETs, MOSFETs Feature Summary

Low on-resistance for improved efficiency
Low leakage current characteristics
High-speed switching capability

Single FETs, MOSFETs Applications

High speed power switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (e.g., REJ03G0372) to ensure alignment with design requirements. Confirm that the TO-220AB flange mount package meets thermal and mechanical constraints. Check for RoHS compliance status as indicated in official documentation before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel MOSFET with low conduction losses is required. The 290 V rating suits applications exceeding standard 200 V limits. Ensure the thermal management system can handle the dissipation associated with the 18 A current rating and 0.091 ohm resistance in the specified package.

Single FETs, MOSFETs Part Context

This part belongs to the Renesas silicon power MOSFET family designed for robust performance in power electronics. The H5N2901FN-E utilizes a planar structure optimized for high voltage blocking and low on-state resistance, typical of Renesas' discrete semiconductor offerings for industrial and consumer power supplies.

Single FETs, MOSFETs Replacement Considerations

Consult official Renesas substitution guides or cross-reference tools for verified alternatives. Do not assume pin-compatible substitutes without verifying electrical parameters and package dimensions against the original specification.