H7N1002LS-E

Single FETs, MOSFETs Overview

The H7N1002LS-E is an N-channel MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 75 A at ambient temperature. The device has a maximum power dissipation of 100 W at case temperature. Key electrical parameters include a gate charge of 155 nC at 10 V, an input capacitance of 9700 pF at 10 V, and a maximum on-resistance of 10 mΩ at 37.5 A with a gate-source voltage of 10 V. The component operates within a junction temperature range up to 150°C and utilizes an LDPAK package.

Single FETs, MOSFETs Feature Summary

• N-channel silicon MOSFET technology for efficient switching applications
• Low on-resistance characteristics optimized for high-current conduction
• Surface-mount construction in an LDPAK package for thermal management

Single FETs, MOSFETs Applications

• Power supply circuits requiring high current handling
• Motor control systems utilizing N-channel switching
• Industrial inverter applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official documentation, as the provided model differs from the verified H7N1002LSTL-E variant. Confirm RoHS compliance status and check for End-of-Life notices via Renesas Electronics official channels before procurement planning. Ensure the package type matches system requirements.

Single FETs, MOSFETs Selection Notes

Select this component based on the required 100 V breakdown voltage and 75 A current capacity. Evaluate the thermal performance constraints relative to the 100 W case dissipation rating. Consider the gate charge specifications for driving circuit compatibility and switching speed requirements in the target application design.

Single FETs, MOSFETs Part Context

This part belongs to the H7N1002 series of N-channel MOSFETs produced by Renesas Electronics. These devices are designed for general-purpose power switching applications. The series typically offers robust performance in terms of on-state resistance and thermal stability, suitable for various industrial and consumer electronics power management solutions.

Single FETs, MOSFETs Replacement Considerations

Consult official Renesas documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence if considering alternative manufacturers or different suffix variants within the same product family.