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HERF1002GH is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARRAY GP 100V 10A ITO220AB. Review the specifications below when checking this part for your BOM.
The HERF1002GH is a high-efficiency rectifier from the HERF1001G series by Taiwan Semiconductor, rated for a repetitive peak reverse voltage of 100 V and an average forward current of 10 A. It features dual dies in an ITO-220AB package with a maximum surge current capability of 125 A. The device exhibits a typical forward voltage of 1.0 V at 5 A and a reverse recovery time of 50 ns. Operating within a junction temperature range of -55°C to +150°C, it includes AEC-Q101 automotive qualification indicated by the 'H' suffix.
Verify the specific ordering code matches the required voltage rating and packaging format. Confirm that the 'H' suffix indicates AEC-Q101 qualification if automotive grade is required. Ensure the ITO-220AB tube packing aligns with assembly requirements. Cross-reference the datasheet version for any updates to mechanical or electrical specifications before finalizing procurement.
Select this component for applications requiring 100 V blocking capability and 10 A continuous current handling. The ITO-220AB package provides robust thermal performance suitable for heatsink mounting. Consider the 50 ns reverse recovery time for switching frequency constraints. Verify that the dual die configuration meets the circuit topology requirements compared to single diode alternatives.
This part belongs to the HERF1001G–HERF1008G series of glass passivated high-efficient rectifiers. The series covers voltage ratings from 50 V to 1000 V while maintaining consistent current and package characteristics. The 'H' designation specifically denotes AEC-Q101 compliance, distinguishing it from standard industrial versions.
Direct substitutes include other parts within the HERF1001G series with equivalent 100 V ratings, such as HERF1002G. Verify pinout compatibility and thermal resistance values when replacing with components from different manufacturers.
The 'H' suffix indicates that the device is qualified according to the AEC-Q101 automotive standard.
The maximum surge peak forward current (IFSM) is 125 A for an 8.3 ms single half-sine wave superimposed on rated load.
The typical junction-to-case thermal resistance (RθJC) is 3 °C/W.
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HERF1002GH is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARRAY GP…
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