Diode Arrays HERF1003GH product image

HERF1003GH

$0.39
  • Description:DIODE ARRAY GP 200V 10A ITO220AB
  • Series:-

SKU:f54b18a676e8 Category: Brand:

  
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HERF1003GH is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARRAY GP 200V 10A ITO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for HERF1003GH

  • Description:DIODE ARRAY GP 200V 10A ITO220AB
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):50 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 200 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package:ITO-220AB
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for HERF1003GH

HERF1003GH

Diode Arrays Overview

The HERF1003GH is a high-efficiency rectifier from the HERF1001G–HERF1008G series by Taiwan Semiconductor. It features an ITO-220AB package with dual cathode configuration and AEC-Q101 qualification. Key electrical parameters include a repetitive peak reverse voltage (VRRM) of 200 V, average forward current (IF) of 10 A, and surge peak forward current (IFSM) of 125 A. The device exhibits a typical forward voltage (VF) of 1.0 V at 5 A, reverse recovery time (trr) of 50 ns, and junction-to-case thermal resistance of 3 °C/W. Operating temperature range spans -55 °C to +150 °C.

Diode Arrays Feature Summary

  • AEC-Q101 qualified for automotive reliability
  • High efficiency with low forward voltage drop
  • High surge current capability
  • Low power loss design

Diode Arrays Applications

  • DC to DC converter
  • Switching mode converters and inverters
  • Freewheeling application

Diode Arrays Procurement Notes

Verify the specific part number against official Taiwan Semiconductor documentation to confirm AEC-Q101 qualification status associated with the 'H' suffix. Ensure the ordering code matches the required voltage rating within the HERF100xG series. Confirm packaging details such as tube quantity and halogen-free compliance before procurement.

Diode Arrays Selection Notes

Select this component for applications requiring robust high-efficiency rectification in confined spaces. The ITO-220AB package provides isolated mounting capabilities suitable for heatsink integration. Consider the 200 V reverse voltage rating and 10 A continuous current capacity when designing circuits that demand high surge tolerance and fast recovery characteristics.

Diode Arrays Part Context

This device belongs to the HERF1001G–HERF1008G series of glass passivated high-efficient rectifiers manufactured by Taiwan Semiconductor. The series offers various voltage ratings from 50 V to 1000 V while maintaining consistent current handling and package dimensions. The HERF1003GH specifically addresses the 200 V requirement within this lineup.

Diode Arrays Replacement Considerations

Direct substitutes are not explicitly listed in the provided datasheet. Designers should evaluate other 10 A, 200 V fast recovery rectifiers in the ITO-220AB package with comparable VF and trr specifications. Verify pinout compatibility and thermal performance metrics before substitution.

Diode Arrays FAQ

What does the 'H' suffix indicate in the HERF1003GH part number?

The 'H' suffix indicates that the device is qualified according to the AEC-Q101 standard.

What is the maximum junction temperature for the HERF1003GH?

The maximum operating junction temperature (TJ MAX) is +150 °C.

Is the HERF1003GH halogen-free?

Yes, the device is halogen-free according to IEC 61249-2-21.

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