HFA32PA120C

Diode Arrays Overview

The HFA32PA120C is a HEXFRED ultrafast soft recovery diode array featuring two legs with a common cathode configuration. It provides a maximum repetitive reverse voltage of 1200 V and supports a continuous forward current of 16 A per leg, totaling 32 A per device. The component utilizes TO-247AC packaging for through-hole mounting. Key electrical characteristics include a typical reverse recovery time of 30 ns at 25 °C and a peak reverse recovery current of 5.8 A under specified test conditions.

Diode Arrays Feature Summary

• Ultrafast recovery with ultrasoft recovery characteristics to minimize switching noise
• Very low peak reverse recovery current (IRRM) and stored charge (Qrr)
• Designed and qualified for industrial level applications
• No tendency to snap-off during the tb portion of recovery

Diode Arrays Applications

• Companion diodes for IGBTs and MOSFETs
• Power supplies and power conversion systems such as inverters
• Motor drives requiring high speed and efficiency

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead-free status and process designator details. Ensure that the procurement specifications align with the required industrial qualification standards and thermal management requirements for the intended application environment.

Diode Arrays Selection Notes

Select this component when designing circuits that demand reduced RFI and EMI alongside lower switching losses in both the diode and the associated switching transistor. The ultrafast recovery profile allows for higher frequency operation and significantly reduces the need for external snubbing components, thereby lowering overall system part count and heatsink size requirements.

Diode Arrays Part Context

This device belongs to Vishay's HEXFRED product line, which employs advanced epitaxial construction and processing techniques. The HFA32PA120C is engineered to offer performance superior to previous rectifier generations, specifically targeting high-speed, high-efficiency power conversion applications where minimizing parasitic effects is critical.

Diode Arrays Replacement Considerations

The datasheet lists VS-HFA32PA120CPBF as a related variant within the same family. Verify compatibility regarding lead-free compliance and package dimensions before substitution.

Diode Arrays FAQ

Does the HFA32PA120C exhibit snap-off behavior during recovery?

No, the HEXFRED features combined in this device ensure it does not exhibit any tendency to snap-off during the tb portion of the recovery cycle.

What is the typical reverse recovery time for this diode?

The typical reverse recovery time (trr) is 30 ns when tested at TJ = 25 °C with IF = 1.0 A and dIF/dt = 200 A/µs.

How is the internal configuration arranged?

The device contains two elements configured as a center tap common cathode arrangement within a single TO-247AC package.