Diode Arrays HFA50PA60C product image

HFA50PA60C

$7.38
  • Description:DIODE ARRAY GP 600V 25A TO-247AC
  • Series:HEXFRED®

SKU:055357641afc Category: Brand:

  
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HFA50PA60C is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY GP 600V 25A TO-247AC. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for HFA50PA60C

  • Description:DIODE ARRAY GP 600V 25A TO-247AC
  • Series:HEXFRED®
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):600 V
  • Current - Average Rectified (Io) (per Diode):25A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 25 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):75 ns
  • Current - Reverse Leakage @ Vr:20 µA @ 600 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AC
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for HFA50PA60C

HFA50PA60C

Diode Arrays Overview

The HFA50PA60C is a HEXFRED ultrafast, soft recovery diode featuring a center tap common cathode configuration in a TO-247AC package. It provides a continuous forward current of 2 x 25 A and a maximum repetitive forward current of 100 A per leg. The device supports a cathode-to-anode voltage of 600 V with a typical reverse recovery time of 23 ns at low currents and up to 160 ns at high currents. Maximum power dissipation reaches 150 W at 25 °C case temperature, while the junction temperature range spans from -55 °C to +150 °C.

Diode Arrays Feature Summary

  • Ultrafast and ultrasoft recovery characteristics designed to minimize switching losses
  • Extremely low peak reverse recovery current (IRRM) and stored charge (Qrr)
  • No tendency to snap-off during the tb portion of recovery for reduced noise
  • Designed and qualified for industrial level applications

Diode Arrays Applications

  • Power supplies and power conversion systems such as inverters
  • Motor drives requiring high speed and high efficiency
  • Companion diodes for IGBTs and MOSFETs

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation before procurement. Confirm that the required variant matches the intended lead-free or standard production specifications. Ensure the component meets the necessary industrial qualification standards for the target application environment. Cross-reference the part marking and package outline dimensions to guarantee physical compatibility with the design.

Diode Arrays Selection Notes

Select this component for circuits demanding high-frequency operation and reduced snubbing requirements. The low reverse recovery charge and current help minimize electromagnetic interference and radio frequency noise. Evaluate thermal management needs based on the specified junction-to-case thermal resistance values. Consider the device's suitability for companion diode roles in high-efficiency power conversion topologies.

Diode Arrays Part Context

This device belongs to the HEXFRED product line from Vishay High Power Products. It utilizes advanced epitaxial construction and processing techniques to achieve superior performance compared to previous rectifier generations. The technology focuses on combining ultrafast recovery times with exceptionally low noise characteristics for modern power electronics.

Diode Arrays Replacement Considerations

Consult official Vishay documentation for confirmed substitute part numbers within the HEXFRED family. Verify electrical parameters and pin configurations when considering alternatives.

Diode Arrays FAQ

What is the typical reverse recovery time for the HFA50PA60C?

The typical reverse recovery time is 23 ns when tested at IF = 1.0 A, dIF/dt = 200 A/µs, and VR = 30 V.

How does the HEXFRED technology affect switching losses?

The combination of ultrafast recovery and extremely low peak recovery current significantly lowers switching losses in both the diode and the associated switching transistor.

What is the maximum repetitive forward current rating?

The maximum repetitive forward current (IFRM) is rated at 100 A per leg.

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