HIP2100EIB

Gate Driver Overview

The HIP2100EIB is a half-bridge gate driver manufactured by Renesas Electronics. It features two independent drivers with 2 A peak output current capability. The device operates within a supply voltage range of 9 V to 14 V and supports high-side voltages up to 100 V. Key electrical parameters include a maximum propagation delay of 35 ns, rise/fall times of 500 ns, and operating temperatures from -40°C to +125°C. It utilizes an SOIC-EP-Narrow-8 package.

Gate Driver Feature Summary

• Provides independent high-side and low-side drive channels for half-bridge configurations
• Capable of sourcing and sinking 2 A peak output current
• Supports bootstrap operation for high-side driving

Gate Driver Applications

• Motor control systems
• Power supply circuits
• Inverter designs

Gate Driver Procurement Notes

Verify the specific suffix 'EIB' against official Renesas documentation to confirm pinout and package variations. Ensure compatibility with existing PCB footprints, particularly regarding the exposed pad thermal requirements of the SOIC-EP-Narrow-8 package. Cross-reference datasheet revisions for any recent manufacturing site changes or labeling updates.

Gate Driver Selection Notes

Select this component when a robust half-bridge driver with moderate speed (500 ns rise/fall) and 2 A drive strength is required. It is suitable for applications where independent channel control is necessary. Consider the 100 V high-side rating and the specific SOIC-EP-Narrow-8 footprint constraints during the design phase.

Gate Driver Part Context

The HIP2100 series includes variants like HIP2100IBZT and HIP2100EIBZ. These are silicon-based gate drivers designed for MOSFET applications. The EIB designation typically indicates a specific package or temperature grade variant within the broader HIP2100 family produced by Renesas/Intersil.

Gate Driver Replacement Considerations

HIP2100EIBZ is a verified direct substitute offering identical functionality in a tube package.