HMC347B-SX

RF Switches Overview

The HMC347B-SX is a broadband, nonreflective gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) single-pole double-throw (SPDT) monolithic microwave integrated circuit. It operates within a frequency range of 0.1 GHz to 20 GHz and features a 50 Ohm impedance design. The device provides low insertion loss, typically 1.7 dB at 20 GHz, and high isolation, typically 46 dB at 20 GHz. It also exhibits high input linearity with an input P1dB of 25 dBm typical.

RF Switches Feature Summary

• Broadband operation covering 0.1 GHz to 20 GHz
• Nonreflective 50 Ohm design for signal integrity
• Low insertion loss characteristics across the frequency band
• High isolation performance between switch ports

RF Switches Applications

• VSAT systems
• Test and measurement equipment
• Wireless infrastructure

RF Switches Procurement Notes

Verify the specific suffix 'SX' against the manufacturer's official documentation to confirm die package specifications and handling requirements. Ensure compatibility with existing RF front-end designs regarding impedance matching and biasing conditions before integration.

RF Switches Selection Notes

Select this component when wide bandwidth up to 20 GHz is required alongside low signal attenuation. The nonreflective nature makes it suitable for applications demanding minimal signal reflection. Consider the GaAs pHEMT technology for robust performance in high-frequency environments.

RF Switches Part Context

This part belongs to Analog Devices Inc.'s portfolio of RF switches. It is designed as a chip-level solution for microwave applications, offering a compact alternative to discrete switching components while maintaining high performance metrics essential for modern communication systems.

RF Switches Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.