HMC383LC4TR-R5

RF Amplifiers Overview

The HMC383LC4TR-R5 is a medium power RF amplifier from Analog Devices Inc., designed for surface-mount applications. It operates within the 12 GHz to 30 GHz frequency range and utilizes GaAs technology. The device provides a typical gain of 15 dB with a noise figure of 7.5 dB. It requires a 5 V supply voltage and draws 100 mA of current. Key performance metrics include a P1dB compression point of 16 dBm, an OIP3 of 25 dBm, and an input return loss of 11 dB. Power dissipation is rated at 920 mW. It is housed in a 24-QFN (4x4) package and functions as a single-channel general-purpose amplifier.

RF Amplifiers Feature Summary

• Utilizes Gallium Arsenide (GaAs) MMIC technology for high-frequency performance
• Designed for medium power amplification in the Ka-band spectrum
• Integrated into a compact 24-lead QFN surface-mount package

RF Amplifiers Applications

• Point-to-point microwave radio links
• Satellite communication ground stations
• Electronic warfare systems
• Radar subsystems

RF Amplifiers Procurement Notes

Verify the specific suffix 'R5' against the manufacturer's official documentation to confirm reel specifications and tape-and-reel dimensions. Ensure compatibility with existing PCB footprints for the 24-QFN package. Confirm moisture sensitivity level (MSL 3) handling requirements during assembly. Cross-reference the exact part number with authorized distributors to avoid counterfeit components, as availability may be restricted.

RF Amplifiers Selection Notes

Select this component when a medium power output is required across the 12-30 GHz band. The GaAs technology offers a balance of gain and linearity suitable for broadband applications. Consider the 5 V supply requirement and 100 mA current draw for power budget calculations. The 24-QFN package is appropriate for designs prioritizing small form factors and thermal management via exposed pads.

RF Amplifiers Part Context

This part belongs to the HMC383G series of RF amplifiers manufactured by Analog Devices Inc. It is specifically engineered for high-frequency wireless infrastructure and defense applications. The device represents a monolithic microwave integrated circuit solution, integrating bias networks and matching elements on a single die to simplify system design.

RF Amplifiers Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.