HMC8142

Description：IC RF AMP 81GHZ-86GHZ DIE
Series：-
Mfr：Analog Devices Inc.
Package：Tray

SKU:b31086b276ec Category: RF Amplifiers Brand: Analog Devices Inc.

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Product introduction

HMC8142 is listed in the RF Amplifiers range at ChipApex. The manufacturer field lists Analog Devices Inc.. Its product description is IC RF AMP 81GHZ-86GHZ DIE. Review the specifications below when checking this part for your BOM.

RF Amplifiers specifications for HMC8142

Description：IC RF AMP 81GHZ-86GHZ DIE
Series：-
Mfr：Analog Devices Inc.
Package：Tray
Frequency：81GHz ~ 86GHz
P1dB：25dBm
Gain：21dB
Noise Figure：-
RF Type：-
Voltage - Supply：4V
Current - Supply：450mA
Test Frequency：81GHz ~ 86GHz
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

RF Amplifiers datasheet and documents for HMC8142

HMC8142

RF Amplifiers Overview

The HMC8142 is an E-band GaAs pHEMT MMIC power amplifier operating from 81 GHz to 86 GHz. It features a gain of 21 dB and delivers 25 dBm output power. The device includes an integrated temperature-compensated on-chip power detector. It operates with a supply voltage of 4 V and draws 450 mA current. The component supports modulations up to 1024 QAM, making it suitable for high-frequency wireless applications requiring precise power monitoring and stable amplification.

RF Amplifiers Feature Summary

Integrated temperature-compensated on-chip power detector
E-band operation from 81 GHz to 86 GHz
GaAs pHEMT technology for high-frequency performance

RF Amplifiers Applications

Point-to-point microwave links
High-capacity backhaul systems
Millimeter-wave radar systems

RF Amplifiers Procurement Notes

Verify the specific datasheet revision and package configuration when sourcing. Confirm that the supplier provides official Analog Devices documentation to ensure the part meets the required E-band specifications and power detector functionality. Check for any obsolescence notices or lifecycle status updates directly from the manufacturer before finalizing procurement plans.

RF Amplifiers Selection Notes

Select this component for designs requiring E-band amplification with built-in power monitoring capabilities. Ensure the system architecture supports the 4 V supply requirement and accommodates the thermal management needs associated with 25 dBm output power. Verify compatibility with 1024 QAM modulation schemes if high-data-rate transmission is a primary design goal.

RF Amplifiers Part Context

This device belongs to the family of millimeter-wave monolithic microwave integrated circuits (MMICs) designed by Analog Devices. It utilizes gallium arsenide pseudomorphic high-electron-mobility transistor (pHEMT) technology to achieve high linearity and efficiency at E-band frequencies. The integration of the power detector simplifies system design by eliminating external sensing components.