HN1D01F(TE85L,F)

Diode Arrays Overview

The HN1D01F(TE85L,F) is a silicon epitaxial planar diode featuring an anode common configuration with two internal units. It provides a maximum reverse voltage of 80 V and supports a total power dissipation of 300 mW. The device exhibits a typical forward voltage of 0.92 V at 100 mA, a reverse recovery time of 1.6 ns, and a total capacitance of 2.2 pF. It operates within a junction temperature range up to 150 °C for LF(T) variants.

Diode Arrays Feature Summary

• Anode common dual-unit structure
• Ultra high speed switching capability
• Low forward voltage drop
• Fast reverse recovery time

Diode Arrays Applications

• High-speed switching circuits
• General purpose rectification
• Clamping applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix (e.g., TE85L, F) against the manufacturer's current catalog to confirm package type and environmental compliance status. Ensure design parameters remain within absolute maximum ratings to maintain reliability. Consult the Toshiba Semiconductor Reliability Handbook for derating guidelines under heavy load conditions.

Diode Arrays Selection Notes

Select this component for designs requiring fast switching speeds and low forward voltage in a compact surface-mount package. Evaluate thermal management requirements based on the 300 mW total power dissipation limit. Confirm that the 80 V reverse voltage rating meets the circuit's peak reverse voltage demands.

Diode Arrays Part Context

This part belongs to Toshiba's ultra-high-speed switching diode lineup. It utilizes silicon epitaxial planar technology to achieve rapid response times. The SM6 package offers a small footprint suitable for dense PCB layouts. Production has been ongoing since 1992, indicating established manufacturing maturity.

Diode Arrays Replacement Considerations

Check for direct equivalents with matching anode common configurations and similar trr specifications. Verify pinout compatibility and package dimensions before substitution.