HN2D01FTE85LF

$0.28

Description：DIODE ARRAY GP 80V 80MA SC-74
Series：-

SKU:05bfa4d69995 Category: Diode Arrays Brand: Toshiba Semiconductor and Storage

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Product introduction

HN2D01FTE85LF is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is DIODE ARRAY GP 80V 80MA SC-74. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for HN2D01FTE85LF

Description：DIODE ARRAY GP 80V 80MA SC-74
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Configuration：3 Independent
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：80 V
Current - Average Rectified (Io) (per Diode)：80mA
Voltage - Forward (Vf) (Max) @ If：1.2 V @ 100 mA
Speed：Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)：4 ns
Current - Reverse Leakage @ Vr：500 nA @ 80 V
Operating Temperature - Junction：125°C (Max)
Mounting Type：Surface Mount
Package / Case：SC-74, SOT-457
Supplier Device Package：SC-74
Grade：-
Qualification：-

Diode Arrays datasheet and documents for HN2D01FTE85LF

HN2D01FTE85LF

Diode Arrays Overview

The HN2D01FTE85LF is a silicon epitaxial planar diode array composed of three independent switching diodes in a JEITA SC-74 package. It features a maximum reverse voltage of 80 V and an average forward current of 80 mA per diode. Key electrical characteristics include a typical forward voltage of 0.98 V at 100 mA, a fast reverse recovery time of 1.6 ns, and a total capacitance of 0.5 pF. The device supports junction temperatures up to 150 °C for LF variants.

Diode Arrays Feature Summary

Composed of three independent ultra-high speed switching diodes within a single package
Provides low forward voltage drop for efficient signal handling
Features fast reverse recovery time suitable for high-frequency applications
Maintains small total capacitance to minimize signal distortion

Diode Arrays Applications

High-speed digital logic circuits
Signal clamping and protection
Pulse generation and shaping networks

Diode Arrays Procurement Notes

Verify the specific ordering suffix to confirm environmental compliance and thermal ratings. Devices ending in LF(T) support higher junction and storage temperatures compared to other suffixes. Confirm RoHS compatibility with the manufacturer prior to integration into regulated systems.

Diode Arrays Selection Notes

Select this component when multiple independent switching paths are required in a compact footprint. Ensure the design accounts for derating factors if utilizing two or three diodes simultaneously, as absolute maximum ratings decrease to 75% per diode. Verify that the 80 V reverse voltage rating meets the circuit's peak inverse voltage requirements.

Diode Arrays Part Context

This part belongs to Toshiba's line of silicon epitaxial planar diodes designed specifically for ultra-high speed switching applications. It serves as a multi-channel alternative to discrete single diodes, reducing board space while maintaining consistent electrical performance across all internal elements.