HN2D02FUTW1T1G

Diode Arrays Overview

The HN2D02FUTW1T1G is a silicon epitaxial planar diode array featuring three independent elements housed in an SC-88 (SOT-363) surface-mount package. It supports a maximum reverse voltage of 80 V and a peak reverse voltage of 85 V, with a forward current rating of 100 mA dc. The device exhibits a fast reverse recovery time of less than 3.0 ns and low junction capacitance under 2.0 pF. Thermal characteristics include a power dissipation limit of 300 mW and a junction temperature range up to 150 °C.

Diode Arrays Feature Summary

• Ultra high speed switching capability with minimal reverse recovery time
• Low junction capacitance for reduced signal distortion
• Compact surface mount packaging designed for low power applications

Diode Arrays Applications

• Ultra high speed switching circuits
• Low power surface mount designs
• High frequency signal processing

Diode Arrays Procurement Notes

Verify the specific ordering suffix TW1T1G against the manufacturer's official documentation to confirm the exact reel quantity and tape-and-reel specifications. Ensure the component matches the SC-88 package dimensions and electrical ratings required by the design. Cross-reference the datasheet revision date to validate the technical parameters before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when ultra-fast switching speeds are critical and space constraints require a compact SOT-363 footprint. The low capacitance makes it suitable for high-frequency applications where signal integrity must be maintained. Verify that the 80 V reverse voltage rating aligns with the circuit's peak operating conditions and thermal environment.

Diode Arrays Part Context

This component belongs to the HN2D02FU series of ultra-high-speed switching diodes manufactured by onsemi. The devices utilize silicon epitaxial planar technology optimized for rapid switching performance. The SC-88 package provides a small form factor suitable for modern electronic assemblies requiring multiple diode functions in a single surface-mount housing.

Diode Arrays Replacement Considerations

Verify compatibility with HN2D02FU variants from other manufacturers. Confirm pinout alignment and electrical parameter equivalence before substitution.

Diode Arrays FAQ

What is the maximum reverse recovery time specified for this diode?

The maximum reverse recovery time is less than 3.0 nanoseconds.

How many diode elements are contained within the SC-88 package?

The device contains three independent silicon epitaxial planar diode elements.

What is the maximum power dissipation rating at 25°C?

The maximum power dissipation is 300 mW at an ambient temperature of 25°C.