HN2S03FUTE85LF

$0.31

Description：DIODE ARRAY SCHOTT 20V 50MA US6
Series：-

SKU:99e137d7e3df Category: Diode Arrays Brand: Toshiba Semiconductor and Storage

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Product introduction

HN2S03FUTE85LF is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is DIODE ARRAY SCHOTT 20V 50MA US6. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for HN2S03FUTE85LF

Description：DIODE ARRAY SCHOTT 20V 50MA US6
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Configuration：3 Independent
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：20 V
Current - Average Rectified (Io) (per Diode)：50mA
Voltage - Forward (Vf) (Max) @ If：550 mV @ 50 mA
Speed：Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：500 nA @ 20 V
Operating Temperature - Junction：125°C (Max)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：US6
Grade：-
Qualification：-

Diode Arrays datasheet and documents for HN2S03FUTE85LF

HN2S03FUTE85LF

Diode Arrays Overview

The HN2S03FUTE85LF is a silicon epitaxial Schottky barrier diode featuring three independent internal diodes designed for high-speed switching applications. It operates with a maximum reverse voltage of 20V and a peak forward current of 100mA per diode. The device exhibits a typical forward voltage of 0.50V at 50mA and a low reverse leakage current of 0.5μA. Total capacitance is typically 3.9pF, supporting rapid signal transitions. It functions within an operating temperature range of -40°C to 110°C.

Diode Arrays Feature Summary

Composed of three independent diodes integrated into a single package
Optimized for high-speed switching applications
Features low forward voltage characteristics
Provides low reverse leakage current

Diode Arrays Applications

High-speed switching circuits
General-purpose rectification
Signal processing applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix TE85LF against official Toshiba Semiconductor and Storage documentation to confirm reel packaging specifications. Ensure the component meets all applicable environmental compliance standards required by your region before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when a compact solution requiring multiple independent Schottky diodes is necessary. Its low total capacitance makes it suitable for high-frequency environments where minimal parasitic effects are critical. Verify that the 20V reverse voltage rating aligns with the circuit's peak inverse voltage requirements.

Diode Arrays Part Context

This part belongs to the HN2S03FU series of silicon epitaxial Schottky barrier diodes manufactured by Toshiba Semiconductor and Storage. The series is engineered specifically for high-speed switching tasks, offering a balance of low forward voltage drop and minimal reverse current to enhance overall circuit efficiency.

Diode Arrays Replacement Considerations

Consult official Toshiba cross-reference lists for verified substitutes. Do not assume functional equivalence based solely on generic electrical parameters without confirming pinout compatibility and absolute maximum ratings.