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HSB278STR-E is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is DIODE SCHOTTKY BARRIER. Review the specifications below when checking this part for your BOM.
HSB278STR-E is a Schottky barrier diode manufactured by Renesas Electronics Corporation. It features a repetitive peak reverse voltage of 30V and a forward current rating of 1A. The device utilizes a surface-mount package, specifically the SOD-323FL configuration, designed for compact circuit layouts. Operating characteristics include a maximum DC forward current of 1A and a surge forward current capability of 15A. The component supports an operating junction temperature range from -40°C to +150°C, ensuring reliability in demanding thermal environments.
Verify the specific suffix 'E' against the manufacturer's official documentation to confirm compliance with environmental standards and material composition requirements. Ensure that the ordering part number matches the exact package variant and tape-and-reel specifications required for your assembly process. Cross-reference the datasheet revision date to confirm the validity of electrical parameters before finalizing procurement orders.
Select this component when a low-loss rectification solution is required for low-voltage applications. The 30V reverse voltage rating defines the maximum blocking capability, while the 1A continuous current rating determines load handling. Consider the thermal resistance and package size relative to the available PCB copper area for adequate heat dissipation during operation.
The HSB278STR-E belongs to the family of Schottky barrier diodes offered by Renesas Electronics. These devices are engineered to replace standard PN junction rectifiers where faster switching speeds and lower power losses are critical. The product line focuses on providing efficient energy conversion in modern electronic systems requiring high reliability.
Public confirmed substitute part numbers: HSB278S.
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