HSMP-489B-TR1

RF Diode Overview

The HSMP-489B-TR1 is a single PIN diode manufactured by Broadcom Limited, designed for RF and microwave applications. It features a maximum reverse breakdown voltage of 100 V and a typical junction capacitance of 0.3 pF at zero bias. The device operates within a temperature range of -65°C to +150°C and is housed in an SOT-323 surface-mount package. Key electrical parameters include a maximum series resistance of 3 ohms at a forward current of 100 mA and a maximum forward current rating of 1 A.

RF Diode Feature Summary

• High isolation performance due to low junction capacitance
• Wide operating temperature range suitable for harsh environments
• Compact surface-mount packaging for automated assembly

RF Diode Applications

• RF attenuators
• Switching circuits
• Phase shifters

RF Diode Procurement Notes

Verify the specific ordering suffix to ensure the correct tape-and-reel configuration matches your manufacturing requirements. Confirm RoHS compliance status through official datasheets before integration. Check for obsolescence notices as component availability may vary over time.

RF Diode Selection Notes

Select this component when low capacitance and high reverse voltage are required in a small footprint. Ensure the forward current limits are not exceeded during peak operation. Compare series resistance specifications against other models if insertion loss is critical.

RF Diode Part Context

This part belongs to Broadcom's portfolio of PIN diodes used in signal processing. It complements similar models like the HSMP-481B, offering comparable functionality in a standard SOT-323 package. These devices are integral to passive RF front-end designs.

RF Diode Replacement Considerations

Potential substitutes include the HSMP-481B or HSMP-489R-BLKG. Verify pin compatibility and electrical parameter equivalence before substitution.