RF Diode HSMS-286P-TR2G product image

HSMS-286P-TR2G

  • Description:RF DIODE SCHOTTKY 4V SOT-363
  • Series:-

SKU:7479ef3ad603 Category: Brand:

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HSMS-286P-TR2G is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is RF DIODE SCHOTTKY 4V SOT-363. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HSMS-286P-TR2G

  • Description:RF DIODE SCHOTTKY 4V SOT-363
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - 2 Pair Series Connection
  • Voltage - Peak Reverse (Max):4V
  • Current - Max:-
  • Capacitance @ Vr, F:0.25pF @ 0V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):-
  • Operating Temperature:150°C (TJ)
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363

RF Diode datasheet and documents for HSMS-286P-TR2G

HSMS-286P-TR2G

RF Diode Overview

The HSMS-286P-TR2G is a surface mount microwave Schottky detector diode from the HSMS-286x series, manufactured by Broadcom Limited. It features a bridge quad configuration within a miniature SOT-363 (SC-70) package. The device is optimized for operation between 915 MHz and 5.8 GHz, serving applications such as RF/ID tags, large signal detection, modulation, and voltage doubling. Key electrical specifications include a typical forward voltage of 250 mV to 350 mV at 1.0 mA and a typical capacitance of 0.25 pF at 0 V reverse bias. The absolute maximum ratings specify a peak inverse voltage of 4.0 V and an operating temperature range of -65°C to +150°C.

RF Diode Feature Summary

  • Bridge quad configuration provides four matched diodes in a single package for enhanced circuit flexibility.

RF Diode Applications

  • RF/ID and RFID tag circuits
  • Large signal detection and modulation
  • RF to DC conversion and voltage doubling

RF Diode Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for end-of-life notifications or obsolescence notices prior to finalizing procurement plans. Ensure packaging integrity matches tape and reel requirements for automated assembly processes.

RF Diode Selection Notes

Select this component when a bridge rectifier topology is required for voltage doubling or differential detection within a compact footprint. The SOT-363 package offers superior thermal conductivity compared to standard SOT-23 variants. Evaluate bias current requirements against sensitivity curves to optimize square law response and temperature stability for the specific target frequency band.

RF Diode Part Context

This part belongs to the HSMS-286x family of DC biased detector diodes designed for low-cost, high-volume designs. The family includes various configurations such as single diodes, series pairs, common cathode/anode pairs, and unconnected pairs, all utilizing matched diodes taken from adjacent wafer sites to ensure consistent performance characteristics.

RF Diode Replacement Considerations

HSMS-286R-TR2G: Ring Quad configuration in SOT-363 package.

RF Diode FAQ

What is the specific diode configuration of the HSMS-286P?

The HSMS-286P contains a Bridge Quad configuration, consisting of four matched Schottky diodes arranged in a bridge topology within the SOT-363 package.

How does the HSMS-286P support voltage doubling applications?

The bridge quad configuration allows the two types of single diode detectors to be combined, adding voltage outputs in series to increase overall voltage sensitivity while halving the input impedance for easier reactive matching.

What are the thermal advantages of the SOT-363 package used in this part?

The copper leadframe in the SOT-363 package has a thermal conductivity four times higher than the Alloy 42 leadframe found in SOT-23 packages, enabling better power dissipation and lower thermal resistance.

HSMS-286P-TR2GHSMS-286P-TR2G

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