HSMS-8202-TR2G

RF Diode Overview

The HSMS-8202-TR2G is a surface mount microwave Schottky mixer diode manufactured by Broadcom Limited. It operates in the X/Ku-band, specifically optimized for frequencies between 10 and 14 GHz. The device utilizes a plastic SOT-143 package configuration. Key electrical specifications include a breakdown voltage of 4 V at 10 µA reverse current, total capacitance of 0.26 pF at 0 V and 1 MHz, and dynamic resistance of 14 Ω at 5 mA forward current. At 12 GHz with 1 mW local oscillator power, it exhibits a typical conversion loss of 6.3 dB and an input impedance of 150 Ω. The component supports a maximum junction temperature of +150°C and total device dissipation of 75 mW.

RF Diode Feature Summary

• Optimized for operation at 10–14 GHz
• Low capacitance and low conversion loss characteristics
• Low dynamic resistance
• Lead-free plastic SOT-143 package

RF Diode Applications

• DBS downconverter applications
• VSAT downconverter applications
• X-band and Ku-band mixer circuits

RF Diode Procurement Notes

Verify the specific ordering suffix to confirm packaging format. The -TR2G suffix indicates a tape and reel quantity of 10,000 pieces with defined device orientation. Confirm that the lead finish is tin and the package material is lead-free alloy 42. Ensure compatibility with standard SOT-143 PCB pad layouts during procurement planning.

RF Diode Selection Notes

Select this component when designing mixers for the 10–14 GHz range requiring low conversion loss. The SOT-143 package provides a compact form factor suitable for space-constrained designs. Consider the 0.26 pF capacitance and 14 Ω dynamic resistance for impedance matching networks. Verify thermal management requirements against the 75 mW dissipation limit.

RF Diode Part Context

This part belongs to the HSMS-8101/8202/8207/8209 series of surface mount microwave Schottky mixer diodes. These devices are designed for high-frequency applications where low noise and efficient mixing are critical. The series offers matched pairs and quads from adjacent wafer sites to ensure performance consistency in balanced mixer configurations.

RF Diode Replacement Considerations

HSMS-8101, HSMS-8207, and HSMS-8209 share identical DC and RF electrical parameters within the same datasheet. These parts may serve as functional replacements if package pinout and mechanical dimensions are verified to be compatible.