HUF75631S3S

Single FETs, MOSFETs Overview

The Fairchild Semiconductor HUF75631S3S is a P-channel PowerFET designed for high-efficiency power switching applications. It features a low on-resistance of 0.028 ohms at a gate-source voltage of -10V, enabling minimal conduction losses in DC-DC converter and motor control circuits. The device supports a drain-source voltage of -30V and a continuous drain current of -94A at 25°C case temperature. Packaged in a TO-220AB style with three leads, it offers robust thermal performance suitable for industrial and automotive environments requiring reliable power management.

Single FETs, MOSFETs Feature Summary

• Low on-resistance for enhanced energy efficiency
• High current handling capability for demanding loads
• Rugged avalanche-rated construction for reliability

Single FETs, MOSFETs Applications

• DC-DC converters
• Motor control systems
• Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'S3S' against official Fairchild or ON Semiconductor datasheets to confirm package type and tape/reel specifications. Ensure compatibility with existing PCB footprints and thermal management designs before procurement. Cross-reference part numbers with current manufacturer portfolios as Fairchild Semiconductor assets are managed by ON Semiconductor.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring efficient P-channel switching with moderate voltage ratings. Consider the thermal resistance characteristics and maximum current limits relative to your heat sink design. Verify that the gate drive voltage requirements align with your control logic levels to ensure optimal performance and longevity of the device.

Single FETs, MOSFETs Part Context

This component belongs to the HUF75xxx series of PowerFETs from Fairchild Semiconductor, now part of ON Semiconductor. These devices are engineered for general-purpose power switching, offering a balance of low on-resistance and fast switching speeds. The series is widely used in various power electronics applications where size and efficiency are critical constraints.

Single FETs, MOSFETs Replacement Considerations

Check for direct replacements within the ON Semiconductor portfolio such as other HUF75631 variants. Verify pinout compatibility and electrical parameters like Rds(on) and Vgs(th) before substituting. Consult official cross-reference guides for approved alternatives that meet identical mechanical and electrical specifications.