Single FETs, MOSFETs HUF75842P3 product image

HUF75842P3

$4.63
  • Description:MOSFET N-CH 150V 43A TO220-3
  • Series:UltraFET™
  • Mfr:onsemi
  • Package:Tube

SKU:1b8a0d82b0ae Category: Brand:

  
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HUF75842P3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 150V 43A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUF75842P3

  • Description:MOSFET N-CH 150V 43A TO220-3
  • Series:UltraFET™
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:42mOhm @ 43A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:175 nC @ 20 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2730 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):230W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for HUF75842P3

HUF75842P3

Single FETs, MOSFETs Overview

The HUF75842P3 is a single N-channel enhancement mode MOSFET manufactured by onsemi. It utilizes UltraFET technology and is housed in a TO-220-3 package for through-hole mounting. The device features a drain-source breakdown voltage of 150 V and supports a continuous drain current of 43 A. Its maximum on-resistance is specified at 42 mOhms, with a gate-source voltage range of -20 V to +20 V. Power dissipation reaches 230 W, and the operating temperature spans from -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

  • Single N-channel configuration utilizing UltraFET technology for enhanced performance.

Single FETs, MOSFETs Applications

  • High-side switching applications
  • DC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the exact suffix against official documentation, as the provided model lacks the specific tape-and-reel or tube designation found in standard listings. Confirm RoHS compliance status and check for active lifecycle status or obsolescence notices directly from the manufacturer before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel switch with moderate current handling is required. The TO-220-3 package facilitates efficient thermal management for power dissipation up to 230 W. Ensure the application circuit can accommodate the specified gate-source voltage limits and provides adequate heat sinking for the intended duty cycle.

Single FETs, MOSFETs Part Context

This part belongs to the UltraFET family of power MOSFETs from onsemi. These devices are engineered for high-efficiency power switching applications requiring robust voltage ratings and low conduction losses within a standard through-hole form factor suitable for industrial and consumer electronics designs.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference data for verified substitutes. Generic replacements must match the 150V rating, 43A current capacity, and TO-220-3 package dimensions to ensure mechanical and electrical compatibility.

HUF75842P3HUF75842P3
$4.63
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