HUFA75321S3ST

$0.54

Description：MOSFET N-CH 55V 35A D2PAK
Series：UltraFET™
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:4fad1d049dcb Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

HUFA75321S3ST is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 55V 35A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUFA75321S3ST

Description：MOSFET N-CH 55V 35A D2PAK
Series：UltraFET™
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：34mOhm @ 35A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 20 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：680 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：93W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for HUFA75321S3ST

HUFA75321S3ST

Single FETs, MOSFETs Overview

The HUFA75321S3ST is an N-Channel UltraFET Power MOSFET manufactured using advanced process technology to achieve low on-resistance per silicon area. It features a 55V drain-to-source voltage rating and supports continuous drain currents up to 35A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.034Ω, enabling high power efficiency in switching applications. It withstands high avalanche energy and offers low reverse recovery time for the body diode. The component operates within a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

Utilizes innovative UltraFET process technology for optimized performance
Capable of withstanding high energy in avalanche mode
Features very low reverse recovery time and stored charge
Designed for high power efficiency requirements

Single FETs, MOSFETs Applications

Switching regulators
Motor drivers
Relay drivers
Low-voltage bus switches
Power management in portable products

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'T' confirms the TO-263AB package variant in tape and reel format. Ensure the complete part number including the suffix is used during procurement to match the correct packaging configuration. Confirm compliance with automotive industry test conditions if required for the application environment.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust N-Channel MOSFET performance with low conduction losses. Consider the thermal resistance characteristics and derating curves for high-current applications. Verify that the gate drive voltage aligns with the specified threshold and on-resistance parameters for optimal switching efficiency.

Single FETs, MOSFETs Part Context

This device was formerly known as the developmental type TA75321. It belongs to the UltraFET family of power MOSFETs designed for superior electrical characteristics. The product meets extreme test conditions demanded by the automotive industry and adheres to AEC Q101 reliability standards.