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HVC132TRF-E is listed in the RF Diode range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is PIN DIODE, 60V. Review the specifications below when checking this part for your BOM.
RF Diode specifications for HVC132TRF-E
- Description：PIN DIODE, 60V
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Diode Type：-
- Voltage - Peak Reverse (Max)：-
- Current - Max：-
- Capacitance @ Vr, F：-
- Resistance @ If, F：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
RF Diode datasheet and documents for HVC132TRF-E
RF Diode Overview
The HVC132TRF-E is a PIN diode manufactured by Renesas Electronics Corporation, designed for RF switching applications. It features a maximum power dissipation of 0.15 W and operates with a voltage rating of 60V to 65V. The component supports a current capacity of 100mA and is housed in a rectangular UFP package. It is supplied in tape and reel format.
RF Diode Feature Summary
- Designed as an RF switch utilizing PIN diode technology
- Capable of handling up to 65V operating voltage
- Supports 100mA current capacity for signal routing
RF Diode Applications
- RF signal switching circuits
- Telecommunications equipment
- Test and measurement instrumentation
RF Diode Procurement Notes
Verify the specific datasheet version and RoHS compliance status directly with authorized distributors or Renesas Electronics. Confirm that the UFP package dimensions match your PCB footprint requirements. Ensure the 60V/65V rating aligns with your circuit's peak voltage constraints before finalizing procurement.
RF Diode Selection Notes
Select this component when a compact PIN diode is required for low-power RF switching tasks. Consider the 0.15W power dissipation limit and the 100mA current capability against your application's load. The UFP package size should be evaluated for space-constrained designs requiring surface-mount integration.
RF Diode Part Context
This part belongs to Renesas' portfolio of discrete semiconductor devices, specifically focusing on RF diodes. It complements their broader range of embedded processing and analog solutions, providing essential passive components for signal management in high-frequency electronic systems.
RF Diode Replacement Considerations
Cross-reference with other PIN diodes offering similar 60V ratings and UFP packaging. Verify electrical parameters such as capacitance and forward voltage drop to ensure functional equivalence in existing RF designs.
RF Diode FAQ
What is the maximum power dissipation of the HVC132TRF-E?
The maximum power dissipation is 0.15 W.
What package type does this component use?
It uses a rectangular UFP package.
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