Memory IC IDT71V3558S100BQ product image

IDT71V3558S100BQ

  • Description:IC SRAM 4.5MBIT PAR 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:2dacdd9df61b Category: Brand:

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IDT71V3558S100BQ is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 4.5MBIT PAR 165CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IDT71V3558S100BQ

  • Description:IC SRAM 4.5MBIT PAR 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:4.5Mbit
  • Memory Organization:256K x 18
  • Memory Interface:Parallel
  • Clock Frequency:100 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-TBGA
  • Supplier Device Package:165-CABGA (13x15)
  • Access Time:5 ns

Memory IC datasheet and documents for IDT71V3558S100BQ

IDT71V3558S100BQ

Memory IC Overview

The IDT71V3558S100BQ is a 4.5 Mbit (256K x 18) synchronous ZBT SRAM manufactured by Renesas Electronics Corporation. It operates at a clock frequency of 100 MHz with a 3.2 ns access time, utilizing a 165-CABGA package. The device supports 3.3V core and I/O supplies within a 3.135V to 3.465V range, functioning in commercial temperatures from 0°C to +70°C.

Memory IC Feature Summary

  • Zero Bus Turnaround technology eliminates dead cycles between read and write operations
  • Pipelined outputs with internally synchronized buffer enable for simplified control
  • On-chip burst counter supporting four-word linear or interleaved sequences
  • Individual byte write capability with dedicated control signals

Memory IC Applications

  • High-performance networking equipment requiring low-latency data buffering
  • Telecommunications systems utilizing synchronous parallel interfaces
  • Industrial control applications needing fast random access memory

Memory IC Procurement Notes

Verify the specific suffix 'S100BQ' against official Renesas documentation to confirm the 100 MHz speed grade and CABGA package variant. Confirm RoHS compliance status as older manufacturing runs may differ. Ensure the component source is authorized to avoid counterfeit risks given the discontinued status.

Memory IC Selection Notes

Select this part when system architecture requires synchronous parallel SRAM with zero bus turnaround latency. Compare against the SA version if JTAG boundary scan support is required. Verify that the 165-ball BGA footprint matches the PCB design constraints and thermal requirements.

Memory IC Part Context

This component belongs to the IDT71V3556/58 family of high-speed synchronous SRAMs. It shares architectural features with the 128K x 36 configuration but provides a 256K x 18 organization. The series is designed for applications demanding high throughput without bus turnaround penalties.

Memory IC Replacement Considerations

Consult official Renesas discontinuation notices for qualified alternatives. Cross-reference pinouts and electrical specifications carefully before substituting with other synchronous SRAM families.

IDT71V3558S100BQIDT71V3558S100BQ

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