Memory IC IDT71V67602S133BQG product image

IDT71V67602S133BQG

  • Description:IC SRAM 9MBIT PARALLEL 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:10d4bfc27966 Category: Brand:

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IDT71V67602S133BQG is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 9MBIT PARALLEL 165CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IDT71V67602S133BQG

  • Description:IC SRAM 9MBIT PARALLEL 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR
  • Memory Size:9Mbit
  • Memory Organization:256K x 36
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-TBGA
  • Supplier Device Package:165-CABGA (13x15)
  • Access Time:4.2 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for IDT71V67602S133BQG

IDT71V67602S133BQG

Memory IC Overview

The IDT71V67602S133BQG is a synchronous single data rate static random-access memory integrated circuit manufactured by Renesas Electronics Corporation. It features a storage capacity of 9 megabits organized as 256 kilobytes by 36 bits. The device supports parallel interface operations with a maximum clock frequency of 133 MHz and an access time of 4.2 nanoseconds. It operates within a supply voltage range of 3.135 volts to 3.465 volts and is housed in a 165-pin cavity ball grid array package measuring 13 by 15 millimeters.

Memory IC Feature Summary

  • Supports high-speed synchronous parallel data transfer at frequencies up to 133 MHz
  • Provides 9-megabit storage density with a 36-bit wide data bus architecture
  • Operates on a standard 3.3-volt power supply rail for system compatibility

Memory IC Applications

  • High-performance networking equipment requiring fast buffer memory
  • Industrial control systems utilizing synchronous logic interfaces
  • Telecommunications infrastructure hardware demanding reliable volatile storage

Memory IC Procurement Notes

Verify the specific suffix BQG against official Renesas documentation to confirm the 165-CABGA package configuration. Confirm that the component meets RoHS3 compliance standards required for your manufacturing process. Check current lifecycle status as this part may be subject to discontinuation notices. Ensure moisture sensitivity level handling procedures are followed during assembly.

Memory IC Selection Notes

Select this component when a 36-bit wide synchronous SRAM interface is required for data buffering or caching applications. The 133 MHz speed grade offers a balance between performance and power consumption compared to faster variants. Consider the physical dimensions of the 165-ball grid array package for printed circuit board layout constraints. Verify that the 3.3-volt operating voltage aligns with the target system's power distribution network.

Memory IC Part Context

This device belongs to the IDT 71V67602 family of synchronous SRAMs, which are designed for high-throughput data processing environments. The family typically includes various speed grades and package options to suit different system requirements. Renesas acquired the IDT product line, integrating these memory solutions into their broader portfolio of embedded processing and connectivity products.

Memory IC Replacement Considerations

Consult official Renesas cross-reference guides for verified substitute part numbers. Alternative options may include other speed grades within the same 71V67602 series or devices from compatible manufacturers offering equivalent pinouts and electrical characteristics.

IDT71V67602S133BQGIDT71V67602S133BQG

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