IDW10G120C5BFKSA1

Diode Arrays Overview

The IDW10G120C5BFKSA1 is a dual anode common cathade Silicon Carbide Schottky diode from Infineon's 5th Generation CoolSiC family. It features a 1200 V repetitive peak reverse voltage and a continuous forward current of 10 A per leg. The device operates within a junction temperature range of -55°C to +175°C, with a maximum power dissipation of 148 W at 25°C case temperature. It utilizes a PG-TO247-3 through-hole package.

Diode Arrays Feature Summary

• Silicon carbide semiconductor material eliminates reverse recovery current and forward recovery effects.
• Temperature independent switching behavior ensures consistent performance across operating ranges.
• Extended surge current capability provides robust operation during transient events.
• Specified dv/dt ruggedness allows reliable performance in high-speed switching applications.

Diode Arrays Applications

• Solar inverters
• Uninterruptable power supplies
• Motor drives
• Power Factor Correction

Diode Arrays Procurement Notes

Verify the specific ordering suffix KSA1 against official Infineon documentation to confirm packaging details and regional compliance requirements. Ensure that the procurement channel sources components directly from authorized distributors or the manufacturer to guarantee authenticity. Cross-reference the datasheet revision history for any updates regarding thermal resistance values or electrical characteristics prior to finalizing orders.

Diode Arrays Selection Notes

Select this component for designs requiring high-frequency switching and reduced electromagnetic interference compared to silicon alternatives. Evaluate the thermal management strategy based on the specified junction-to-case thermal resistance. Confirm that the application circuit can accommodate the tight forward voltage distribution to ensure balanced current sharing in parallel configurations.

Diode Arrays Part Context

This device belongs to the 5th Generation CoolSiC product line, designed to improve system efficiency over traditional silicon diodes. It enables higher power density solutions by reducing heatsink requirements and allowing smaller magnetics. The technology supports industrial power control applications where reliability and extended surge current handling are critical.

Diode Arrays Replacement Considerations

Consult official Infineon substitution guides for verified alternative part numbers. Do not assume functional equivalence with other manufacturers' devices without comprehensive electrical and thermal validation. Verify pinout compatibility and package dimensions before attempting physical replacement in existing assemblies.

Diode Arrays FAQ

What is the configuration of the IDW10G120C5BFKSA1?

The device features a dual anode common cathode configuration, with Pin 1 as Anode 1, Pins 2 and backside as Cathode, and Pin 3 as Anode 2.

Does this component exhibit reverse recovery charge?

No, the Silicon Carbide Schottky technology ensures there is no reverse recovery current and no forward recovery effect.

What is the maximum dv/dt rating for this diode?

The device specifies a dv/dt ruggedness of 150 V/ns when tested with a reverse voltage between 0 and 960 V.