IDW24G65C5BXKSA1

Diode Arrays Overview

The IDW24G65C5BXKSA1 is a Silicon Carbide Schottky diode from Infineon's 5th Generation thinQ! family, housed in a PG-TO247-3 package. It features a 650 V DC blocking voltage and supports a continuous forward current of 12 A per leg at a case temperature below 125°C. The device exhibits a typical forward voltage of 1.5 V at 12 A and 25°C, with a total capacitive charge of 18 nC per leg at 400 V reverse bias. It operates within a junction temperature range of -55°C to 175°C.

Diode Arrays Feature Summary

• Utilizes Silicon Carbide semiconductor material for superior thermal performance and efficiency compared to silicon diodes.
• Features zero reverse recovery charge and no forward recovery, enabling benchmark switching behavior.
• Demonstrates temperature-independent switching characteristics and high dv/dt ruggedness.
• Designed for high surge current capability and optimized for high-temperature operation.

Diode Arrays Applications

• Switch mode power supplies
• Power factor correction circuits
• Solar inverters
• Uninterruptible power supplies

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking details. Confirm component availability status directly with authorized distributors or the manufacturer, as supply conditions may change. Ensure compliance with RoHS standards and JEDEC qualification requirements relevant to the target application environment before procurement.

Diode Arrays Selection Notes

Select this component for applications requiring high-frequency operation and reduced cooling system size due to improved thermal characteristics. Consider the low figure of merit (Qc x Vf) for enhanced system efficiency across all load conditions. Ensure the design accommodates the specified thermal resistance and mounting torque requirements for reliable long-term performance.

Diode Arrays Part Context

This part belongs to the CoolSiC™ 650 V G5 product line, designed to complement Infineon's CoolMOS™ 7 superjunction MOSFET families. The thinQ! Generation 5 technology utilizes a compact design and thin-wafer process to deliver improved efficiency over previous generations, targeting stringent requirements in the 650 V voltage range.

Diode Arrays Replacement Considerations

Consult official Infineon cross-reference documents for verified substitutes. Generic replacements may not match the specific Qc x Vf figure of merit or thermal characteristics of the 5th Generation thinQ! technology.

Diode Arrays FAQ

Does the IDW24G65C5BXKSA1 exhibit reverse recovery charge?

No, the device is a Schottky diode that features no reverse recovery charge and no forward recovery.

What is the maximum repetitive peak reverse voltage rating?

The maximum repetitive peak reverse voltage (VRRM) is rated at 650 V at a junction temperature of 25°C.

How does the forward voltage vary with temperature?

The forward voltage increases with temperature; it is typically 1.5 V at 25°C and rises to 1.8 V at 150°C when conducting 12 A.