IDW40G65C5BXKSA1

Diode Arrays Overview

The IDW40G65C5BXKSA1 is a silicon carbide Schottky diode from Infineon's 5th Generation thinQ! family, housed in a PG-TO247-3 package. It features a 650 V DC blocking voltage and supports a continuous forward current of 20 A per leg at a case temperature below 120°C. The device exhibits a typical forward voltage of 1.5 V at 20 A and 25°C, with a total capacitive charge of 58 nC (2 x 29 nC) measured at 400 V reverse bias. It operates within a junction temperature range of -55°C to +175°C.

Diode Arrays Feature Summary

• Utilizes silicon carbide semiconductor material for benchmark switching behavior and high surge current capability.
• Features no reverse recovery or forward recovery characteristics, ensuring temperature-independent switching performance.
• Designed with optimized thermal characteristics and a low figure of merit to enable higher frequency solutions.

Diode Arrays Applications

• Switch mode power supplies
• Power factor correction circuits
• Solar inverters
• Uninterruptible power supplies

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact packaging and marking details. Confirm that the component meets all required JEDEC qualification standards for the intended target application environment before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component when system efficiency improvements over standard silicon diodes are required. It is specifically designed to complement 650V CoolMOS families, making it suitable for applications demanding reduced cooling requirements and increased power density through lower operating temperatures.

Diode Arrays Part Context

This part belongs to the 5th Generation thinQ! SiC Schottky Diode series. The generation utilizes new compact design and thin-wafer technology to improve efficiency across all load conditions compared to previous iterations.

Diode Arrays Replacement Considerations

Datasheet references IDW40G65C5B as the base model identifier. Verify if alternative suffixes like XKSA2 represent identical electrical parameters or different packaging configurations.

Diode Arrays FAQ

Does the IDW40G65C5BXKSA1 exhibit reverse recovery charge?

No, the datasheet specifies that the device has no reverse recovery charge due to its Schottky barrier construction.

What is the maximum repetitive peak reverse voltage rating?

The maximum repetitive peak reverse voltage (VRRM) is rated at 650 V at a junction temperature of 25°C.

How does the forward voltage change with temperature?

The forward voltage increases with temperature; it is typically 1.5 V at 25°C and rises to 1.8 V at 150°C when conducting 20 A.