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IL208AT is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Vishay Semiconductor Opto Division. Its product description is OPTOISO 4KV TRANS W/BASE 8-SOIC. Review the specifications below when checking this part for your BOM.
The IL208AT is a single-channel optoisolator manufactured by Vishay Semiconductor Opto Division. It features a gallium arsenide infrared LED coupled to a silicon NPN phototransistor with a base connection, housed in an 8-SOIC package. The device provides an isolation voltage of 4000Vrms and supports a maximum forward current of 60 mA. It operates within a temperature range of -40°C to 100°C and offers a typical collector-emitter saturation voltage of 400mV.
Verify the specific suffix and manufacturer details against official Vishay documentation before procurement. Confirm that the 8-SOIC package dimensions match your PCB layout requirements. Ensure the operating temperature range meets your environmental specifications. Check for RoHS compliance status if required by your manufacturing standards.
Select this component when a phototransistor output with a base terminal is necessary for improved performance. Consider the 4000Vrms isolation rating for safety-critical designs. Evaluate the CTR specifications against your drive current requirements. Compare package size constraints with alternative SOIC options.
This part belongs to the IL205AT/IL206AT/IL207AT/IL208AT family from Vishay. These devices share similar construction principles but differ in specific electrical characteristics such as current transfer ratio and switching times. The IL208AT is distinguished by its specific CTR range and base connection availability.
Public confirmed substitute part numbers are not available in the provided source material. Consult official Vishay documentation or authorized distributors for verified cross-reference data before substituting this component.
The IL208AT has an isolation voltage rating of 4000Vrms.
Yes, the IL208AT features a silicon NPN phototransistor with a base connection.
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