IMTA65R040M2HXTMA1

$7.87

Description：SILICON CARBIDE MOSFET
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d04794096e6b Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IMTA65R040M2HXTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IMTA65R040M2HXTMA1

Description：SILICON CARBIDE MOSFET
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for IMTA65R040M2HXTMA1

IMTA65R040M2HXTMA1

Single FETs, MOSFETs Overview

The IMTA65R040M2HXTMA1 is a silicon carbide MOSFET from Infineon Technologies, utilizing the CoolSiC™ G2 generation. It features a PG-LHSOF-4 package with XT interconnection technology for optimized thermal performance. Key electrical parameters include a drain-source voltage of 650 V and a typical on-state resistance of 40 mΩ at 25°C. The device supports a continuous DC drain current of 54 A at 25°C and a peak pulse current of 142 A. Gate charge is typically 28 nC at 400 V. Thermal characteristics specify a junction-to-case resistance of 0.62 °C/W, with an operating temperature range spanning -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Built on robust second-generation Silicon Carbide trench technology for superior reliability.
Features ultra-low switching losses and benchmark gate threshold voltage for flexible driving.
Robust against parasitic turn-on even with zero volt turn-off gate voltage.
Provides best-in-class thermal performance through XT interconnection technology.

Single FETs, MOSFETs Applications

Switching Mode Power Supplies (SMPS)
Solar PV inverters
Energy storage and battery formation systems
Uninterruptible Power Supplies (UPS)
EV charging infrastructure

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix XTMA1 to confirm the reel packaging configuration. Ensure that the source and driver source pins are not exchanged during assembly, as this may lead to malfunction. Confirm compliance with JEDEC standards for industrial applications before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency and power density in 650 V applications. The low gate charge and fast switching times facilitate simplified driver design. Consider the thermal resistance and maximum ratings when designing heat dissipation solutions for continuous operation.

Single FETs, MOSFETs Part Context

This part belongs to the CoolSiC™ MOSFET 650 V G2 family, representing the latest generation of silicon carbide devices from Infineon. It is designed to fulfill system and market needs for cost-effective, highly efficient power electronics. The product is fully qualified according to JEDEC standards for industrial applications.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for other PG-LHSOF-4 packaged SiC MOSFETs within the same voltage class. Verify pinout compatibility, specifically regarding the non-interchangeable source and driver source pins. Compare thermal resistance and on-state resistance values to ensure equivalent performance.