IPA60R120P7XKSA1

$3.08

Description：MOSFET N-CH 600V 26A TO220
Series：CoolMOS™ P7
Mfr：Infineon Technologies
Package：Tube

SKU:c8b0f9515352 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPA60R120P7XKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 26A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPA60R120P7XKSA1

Description：MOSFET N-CH 600V 26A TO220
Series：CoolMOS™ P7
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：120mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id：4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1544 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：28W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO220 Full Pack
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for IPA60R120P7XKSA1

IPA60R120P7XKSA1

Single FETs, MOSFETs Overview

The Infineon IPA60R120P7XKSA1 is a 600V CoolMOS P7 N-channel enhancement-mode MOSFET in a PG-TO 220 FullPAK package. It features a maximum drain-source on-state resistance of 120 mΩ and a continuous drain current of 26 A at 25°C case temperature. The device supports a pulsed drain current of 78 A, has a typical total gate charge of 36 nC, and offers an avalanche energy rating of 82 mJ. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed for hard and soft switching applications including PFC and LLC stages due to outstanding commutation ruggedness.
Provides significant reduction of switching and conduction losses for improved efficiency.
Features excellent ESD robustness exceeding 2kV (HBM) across all products.
Delivers low RDS(on)*A values below 1 Ohm*mm² for optimized performance.

Single FETs, MOSFETs Applications

PFC stages
Hard switching PWM stages
Resonant switching stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix XKSA1 against official documentation to confirm packaging details and compliance status. Ensure the component matches the PG-TO 220 FullPAK outline dimensions. Confirm that the part number corresponds to the industrial qualification grade specified in the datasheet before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency power conversion designs requiring low switching losses. The device is suitable for both hard and soft switching topologies. Consider the thermal characteristics and safe operating area when designing heat dissipation solutions for the target application environment.

Single FETs, MOSFETs Part Context

This component belongs to the 600V CoolMOS P7 series, which utilizes superjunction technology pioneered by Infineon Technologies. It serves as the successor to the CoolMOS P6 series, combining fast switching capabilities with ease of use. The platform is designed to offer lower ringing tendencies and outstanding body diode robustness against hard commutation.