Single FETs, MOSFETs IPB041N04NGATMA1 product image

IPB041N04NGATMA1

$1.30
  • Description:MOSFET N-CH 40V 80A D2PAK
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:835c8517aba4 Category: Brand:

  
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IPB041N04NGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 80A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPB041N04NGATMA1

  • Description:MOSFET N-CH 40V 80A D2PAK
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:4.1mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id:4V @ 45µA
  • Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4500 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):94W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TO263-3
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IPB041N04NGATMA1

IPB041N04NGATMA1

Single FETs, MOSFETs Overview

IPB041N04NGATMA1 is an N-channel Power MOSFET from the OptiMOS 3 family, manufactured by Infineon Technologies. It features a PG-TO263-3 (D2PAK) surface-mount package with a maximum drain-source voltage of 40 V and a continuous drain current of 80 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 4.1 mΩ and a total gate charge of 56 nC. Thermal resistance from junction to case is 1.6 K/W, supporting a power dissipation of 94 W. Operating temperatures range from -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

  • Optimized for high-efficiency DC/DC converters and switching mode power supplies
  • Features excellent gate charge versus on-resistance product figure of merit
  • Includes integrated body diode with specified reverse recovery characteristics
  • Qualified according to JEDEC standards for automotive target applications

Single FETs, MOSFETs Applications

  • Switching Mode Power Supplies (SMPS)
  • DC/DC Converter circuits
  • Automotive electronic systems

Single FETs, MOSFETs Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to confirm the specific tape-and-reel packaging quantity and marking details. Confirm RoHS compliance status and halogen-free certification requirements prior to final procurement authorization.

Single FETs, MOSFETs Selection Notes

Select this component when designing low-voltage power stages requiring robust avalanche energy handling and fast switching speeds. Ensure thermal management solutions accommodate the 1.6 K/W junction-to-case resistance for optimal performance under continuous load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3 generation of silicon power transistors designed for synchronous rectification and general power switching. It utilizes advanced trench technology to minimize conduction losses while maintaining reliable operation in harsh electrical environments typical of modern power electronics.

Single FETs, MOSFETs Replacement Considerations

The IPP041N04NG is the through-hole equivalent variant within the same family. Verify pinout compatibility and thermal interface differences before substituting between the PG-TO263-3 and PG-TO220-3 packages.

IPB041N04NGATMA1IPB041N04NGATMA1
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