IPB50N10S3L16ATMA2

$0.88

Description：MOSFET N-CH 100V 70A TO263-3
Series：OptiMOS™ T
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:bb9b657190b9 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPB50N10S3L16ATMA2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 70A TO263-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPB50N10S3L16ATMA2

Description：MOSFET N-CH 100V 70A TO263-3
Series：OptiMOS™ T
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：15.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：2.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs：64 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4180 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：100W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-3-2
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IPB50N10S3L16ATMA2

IPB50N10S3L16ATMA2

Single FETs, MOSFETs Overview

The IPB50N10S3L-16 is an N-channel enhancement mode OptiMOS-T power transistor in a PG-TO263-3-2 (D2PAK) package. It features a drain-source breakdown voltage of 100 V and a continuous drain current of 50 A at 25°C case temperature. The maximum on-state resistance is 15.4 mΩ at VGS=10V. It supports a pulsed drain current of 200 A, operates up to 175°C junction temperature, and has a thermal resistance junction-to-case of 1.5 K/W.

Single FETs, MOSFETs Feature Summary

Automotive qualified under AEC-Q101 standards
100% avalanche tested for robustness
Optimized low on-state resistance via OptiMOS-T technology

Single FETs, MOSFETs Applications

Automotive power distribution systems
High-side switching applications
Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'ATMA2' against official Infineon documentation to confirm tape-and-reel packaging details. Confirm current production status as datasheets may indicate end-of-life or recommended new design status. Ensure component authenticity through authorized channels.

Single FETs, MOSFETs Selection Notes

Select this component for automotive applications requiring high reliability and low conduction losses. Consider the 15.4 mΩ RDS(on) for efficiency optimization. Verify PCB footprint compatibility with the PG-TO263-3-2 package and ensure adequate thermal management for the 1.5 K/W junction-to-case resistance.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS-T family, designed for automotive-grade performance. It integrates advanced trench MOSFET technology to minimize switching and conduction losses. The D2PAK package provides efficient heat dissipation suitable for surface-mount assembly in compact automotive modules.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same OptiMOS-T series. Verify that any substitute matches the 100 V rating, 50 A current capacity, and 15.4 mΩ maximum RDS(on). Ensure the replacement also holds AEC-Q101 qualification if used in automotive contexts.