IPC020N10L3X1SA1

Single FETs, MOSFETs Overview

The IPC020N10L3 is an N-channel enhancement mode OptiMOS™3 Power MOS Transistor Chip manufactured by Infineon Technologies. It features a die size of 2.1 x 0.96 mm² and a thickness of 220 µm. The device has a drain-source breakdown voltage (V(BR)DSS) of 100 V and a typical zero gate voltage drain current (IDSS) of 0.1 µA at VDS=100 V. The typical drain-source on-resistance (RDS(on)) is 42 mΩ at VGS=4.5 V and ID=2.0 A, with a maximum of 100 mΩ limited by wafer test equipment. Gate threshold voltage ranges from 1.1 V to 2.1 V. The reverse diode forward on-voltage is typically 1.0 V at IF=1 A. Single pulse avalanche energy (EAS) is rated at 184 mJ under specific conditions.

Single FETs, MOSFETs Feature Summary

• OptiMOS™3 technology for optimized power performance
• Bare die configuration suitable for custom packaging
• Backside metallization using NiV system
• Frontside metallization utilizing AlCu system

Single FETs, MOSFETs Applications

• Industrial applications
• Multimarket applications

Single FETs, MOSFETs Procurement Notes

Verify the exact revision status of the datasheet before finalizing designs, as specifications may evolve. Confirm that the bare die format meets your assembly capabilities, including soldering or gluing requirements. Ensure electrostatic discharge precautions are strictly followed during handling, as the component is sensitive according to MIL-STD 883C standards. Validate thermal management strategies given the specific die dimensions and thickness provided in the documentation.

Single FETs, MOSFETs Selection Notes

Select this component when a bare die solution is required rather than a packaged transistor. Consider the specific die dimensions of 2.1 x 0.96 mm² for footprint planning. Evaluate the RDS(on) characteristics at VGS=4.5 V against your circuit's drive voltage capabilities. Review the avalanche energy rating if transient robustness is a critical design parameter for the target application environment.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™3 family of power MOS transistors designed for industrial and multimarket segments. Unlike packaged versions such as the BSZ440N10LS3 G, this component is supplied as a bare die. Designers must refer to related packaged products for dynamic characterization data, as the bare die itself does not include package parasitics. It serves as a foundational semiconductor element for custom power module integration.

Single FETs, MOSFETs Replacement Considerations

No direct public substitute part numbers are listed in the source material. For packaged equivalents, reference documents point to the BSZ440N10LS3 G for dynamic characterization context, but it is a distinct packaged product. Custom die replacements require matching the 2.1 x 0.96 mm² die size and 100 V rating.