IPD144N06NGBTMA1

Single FETs, MOSFETs Overview

The IPD144N06NGBTMA1 is a single N-channel enhancement-mode MOSFET from Infineon Technologies, utilizing silicon technology. It features a D²PAK-3L (TO-252-3) surface-mount package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 60 V and a continuous drain current (Id) of 144 A at 25 °C case temperature. The device exhibits a maximum on-state resistance (Rds(on)) of 4.8 mΩ. It operates within a junction temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

• Optimized for high-current DC-DC converter applications
• Enhanced thermal performance via D²PAK-3L package design
• Low on-state resistance for efficient power switching

Single FETs, MOSFETs Applications

• High-current DC-DC converters
• Motor control systems
• Power supply modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'GBTMA1' against official Infineon documentation to confirm availability and exact specifications. Cross-reference with authorized distributors to ensure component authenticity and traceability. Confirm that the D²PAK-3L package variant matches the target PCB footprint requirements before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high current handling capabilities up to 144 A at low voltages. Ensure the thermal management solution supports the specified operating temperature range. Verify gate drive compatibility with the enhancement-mode characteristics and check that the 60 V rating provides sufficient margin for the application's peak voltage conditions.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's discrete MOSFET portfolio, specifically designed for power electronics. It represents a silicon-based solution distinct from wide-bandgap technologies like CoolSiC. The D²PAK-3L package offers a balance between power density and thermal dissipation for industrial and automotive-grade applications.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the IPD series or other Infineon 60V N-channel MOSFETs with comparable Rds(on) and Id ratings. Ensure any replacement maintains the same pinout and thermal characteristics to avoid redesigning the PCB layout.